Design of embedded SCR device to improve ESD robustness of stacked-device output driver in low-voltage CMOS technology

Chun Yu Lin, Yan Lian Chiu

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

This study proposes a novel design for an embedded silicon-controlled rectifier (SCR) device to improve the electrostatic discharge (ESD) robustness of a stacked-device output driver. A 3 × VDD-tolerant stacked-device output driver with embedded SCR is demonstrated using a 0.18 μm CMOS process with VDD of 3.3 V. This design is verified in a silicon chip, and it is shown that the proposed output driver with embedded SCR can deliver an output voltage of 3 × VDD. The ESD robustness can be improved without the use of any additional ESD protection device or layout area. Furthermore, the proposed design can also be used for an n × VDD-tolerant stacked-device output driver to improve its ESD robustness.

Original languageEnglish
Pages (from-to)28-34
Number of pages7
JournalSolid-State Electronics
Volume124
DOIs
Publication statusPublished - 2016 Oct 1

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silicon controlled rectifiers
Electrostatic discharge
Thyristors
low voltage
CMOS
electrostatics
output
Electric potential
Silicon
layouts
chips
electric potential
silicon

Keywords

  • Electrostatic discharge (ESD)
  • Output driver
  • Silicon-controlled rectifier (SCR)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Design of embedded SCR device to improve ESD robustness of stacked-device output driver in low-voltage CMOS technology. / Lin, Chun Yu; Chiu, Yan Lian.

In: Solid-State Electronics, Vol. 124, 01.10.2016, p. 28-34.

Research output: Contribution to journalArticle

@article{df0688d274f34170a4053b3760aff39a,
title = "Design of embedded SCR device to improve ESD robustness of stacked-device output driver in low-voltage CMOS technology",
abstract = "This study proposes a novel design for an embedded silicon-controlled rectifier (SCR) device to improve the electrostatic discharge (ESD) robustness of a stacked-device output driver. A 3 × VDD-tolerant stacked-device output driver with embedded SCR is demonstrated using a 0.18 μm CMOS process with VDD of 3.3 V. This design is verified in a silicon chip, and it is shown that the proposed output driver with embedded SCR can deliver an output voltage of 3 × VDD. The ESD robustness can be improved without the use of any additional ESD protection device or layout area. Furthermore, the proposed design can also be used for an n × VDD-tolerant stacked-device output driver to improve its ESD robustness.",
keywords = "Electrostatic discharge (ESD), Output driver, Silicon-controlled rectifier (SCR)",
author = "Lin, {Chun Yu} and Chiu, {Yan Lian}",
year = "2016",
month = "10",
day = "1",
doi = "10.1016/j.sse.2016.07.029",
language = "English",
volume = "124",
pages = "28--34",
journal = "Solid-State Electronics",
issn = "0038-1101",
publisher = "Elsevier Limited",

}

TY - JOUR

T1 - Design of embedded SCR device to improve ESD robustness of stacked-device output driver in low-voltage CMOS technology

AU - Lin, Chun Yu

AU - Chiu, Yan Lian

PY - 2016/10/1

Y1 - 2016/10/1

N2 - This study proposes a novel design for an embedded silicon-controlled rectifier (SCR) device to improve the electrostatic discharge (ESD) robustness of a stacked-device output driver. A 3 × VDD-tolerant stacked-device output driver with embedded SCR is demonstrated using a 0.18 μm CMOS process with VDD of 3.3 V. This design is verified in a silicon chip, and it is shown that the proposed output driver with embedded SCR can deliver an output voltage of 3 × VDD. The ESD robustness can be improved without the use of any additional ESD protection device or layout area. Furthermore, the proposed design can also be used for an n × VDD-tolerant stacked-device output driver to improve its ESD robustness.

AB - This study proposes a novel design for an embedded silicon-controlled rectifier (SCR) device to improve the electrostatic discharge (ESD) robustness of a stacked-device output driver. A 3 × VDD-tolerant stacked-device output driver with embedded SCR is demonstrated using a 0.18 μm CMOS process with VDD of 3.3 V. This design is verified in a silicon chip, and it is shown that the proposed output driver with embedded SCR can deliver an output voltage of 3 × VDD. The ESD robustness can be improved without the use of any additional ESD protection device or layout area. Furthermore, the proposed design can also be used for an n × VDD-tolerant stacked-device output driver to improve its ESD robustness.

KW - Electrostatic discharge (ESD)

KW - Output driver

KW - Silicon-controlled rectifier (SCR)

UR - http://www.scopus.com/inward/record.url?scp=84982803746&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84982803746&partnerID=8YFLogxK

U2 - 10.1016/j.sse.2016.07.029

DO - 10.1016/j.sse.2016.07.029

M3 - Article

AN - SCOPUS:84982803746

VL - 124

SP - 28

EP - 34

JO - Solid-State Electronics

JF - Solid-State Electronics

SN - 0038-1101

ER -