Design of dual-band ESD protection for 24-/60-GHz millimeter-wave circuits

Li Wei Chu; Chun Yu Lin; Ming Dou Ker

doi:10.1109/TDMR.2012.2217498

Design of dual-band ESD protection for 24-/60-GHz millimeter-wave circuits

Li Wei Chu^*
, Chun Yu Lin
, Ming Dou Ker

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

To effectively protect the millimeter-wave (MMW) circuits in nanoscale CMOS technology from electrostatic discharge (ESD) damages, a dual-band ESD protection cell for 24-/60-GHz ESD protection is presented in this paper. The proposed ESD protection cell consisted of a diode, a silicon-controlled rectifier, a PMOS, and two inductors. To verify the dual-band characteristics and ESD robustness, the proposed ESD protection circuit had been applied to a 24-/60-GHz low-noise amplifier (LNA). The measurement results showed over-2-kV human-body-model ESD robustness with little performance degradation on LNA. The proposed dual-band ESD protection cell was suitable for circuit designers for them to easily apply ESD protection in the dual-band MMW circuits.

Original language	English
Article number	6296697
Pages (from-to)	110-118
Number of pages	9
Journal	IEEE Transactions on Device and Materials Reliability
Volume	13
Issue number	1
DOIs	https://doi.org/10.1109/TDMR.2012.2217498
Publication status	Published - 2013
Externally published	Yes

Keywords

CMOS
dual-band
electrostatic discharge (ESD) protection
millimeter-wave (MMW)
radio frequency (RF)

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Safety, Risk, Reliability and Quality
Electrical and Electronic Engineering

Access to Document

10.1109/TDMR.2012.2217498

Cite this

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title = "Design of dual-band ESD protection for 24-/60-GHz millimeter-wave circuits",

abstract = "To effectively protect the millimeter-wave (MMW) circuits in nanoscale CMOS technology from electrostatic discharge (ESD) damages, a dual-band ESD protection cell for 24-/60-GHz ESD protection is presented in this paper. The proposed ESD protection cell consisted of a diode, a silicon-controlled rectifier, a PMOS, and two inductors. To verify the dual-band characteristics and ESD robustness, the proposed ESD protection circuit had been applied to a 24-/60-GHz low-noise amplifier (LNA). The measurement results showed over-2-kV human-body-model ESD robustness with little performance degradation on LNA. The proposed dual-band ESD protection cell was suitable for circuit designers for them to easily apply ESD protection in the dual-band MMW circuits.",

keywords = "CMOS, dual-band, electrostatic discharge (ESD) protection, millimeter-wave (MMW), radio frequency (RF)",

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year = "2013",

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publisher = "Institute of Electrical and Electronics Engineers Inc.",

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T1 - Design of dual-band ESD protection for 24-/60-GHz millimeter-wave circuits

AU - Chu, Li Wei

AU - Lin, Chun Yu

AU - Ker, Ming Dou

PY - 2013

Y1 - 2013

N2 - To effectively protect the millimeter-wave (MMW) circuits in nanoscale CMOS technology from electrostatic discharge (ESD) damages, a dual-band ESD protection cell for 24-/60-GHz ESD protection is presented in this paper. The proposed ESD protection cell consisted of a diode, a silicon-controlled rectifier, a PMOS, and two inductors. To verify the dual-band characteristics and ESD robustness, the proposed ESD protection circuit had been applied to a 24-/60-GHz low-noise amplifier (LNA). The measurement results showed over-2-kV human-body-model ESD robustness with little performance degradation on LNA. The proposed dual-band ESD protection cell was suitable for circuit designers for them to easily apply ESD protection in the dual-band MMW circuits.

AB - To effectively protect the millimeter-wave (MMW) circuits in nanoscale CMOS technology from electrostatic discharge (ESD) damages, a dual-band ESD protection cell for 24-/60-GHz ESD protection is presented in this paper. The proposed ESD protection cell consisted of a diode, a silicon-controlled rectifier, a PMOS, and two inductors. To verify the dual-band characteristics and ESD robustness, the proposed ESD protection circuit had been applied to a 24-/60-GHz low-noise amplifier (LNA). The measurement results showed over-2-kV human-body-model ESD robustness with little performance degradation on LNA. The proposed dual-band ESD protection cell was suitable for circuit designers for them to easily apply ESD protection in the dual-band MMW circuits.

KW - CMOS

KW - dual-band

KW - electrostatic discharge (ESD) protection

KW - millimeter-wave (MMW)

KW - radio frequency (RF)

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Design of dual-band ESD protection for 24-/60-GHz millimeter-wave circuits

Abstract

Keywords

ASJC Scopus subject areas

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