Abstract
To effectively protect the millimeter-wave (MMW) circuits in nanoscale CMOS technology from electrostatic discharge (ESD) damages, a dual-band ESD protection cell for 24-/60-GHz ESD protection is presented in this paper. The proposed ESD protection cell consisted of a diode, a silicon-controlled rectifier, a PMOS, and two inductors. To verify the dual-band characteristics and ESD robustness, the proposed ESD protection circuit had been applied to a 24-/60-GHz low-noise amplifier (LNA). The measurement results showed over-2-kV human-body-model ESD robustness with little performance degradation on LNA. The proposed dual-band ESD protection cell was suitable for circuit designers for them to easily apply ESD protection in the dual-band MMW circuits.
| Original language | English |
|---|---|
| Article number | 6296697 |
| Pages (from-to) | 110-118 |
| Number of pages | 9 |
| Journal | IEEE Transactions on Device and Materials Reliability |
| Volume | 13 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 2013 |
| Externally published | Yes |
Keywords
- CMOS
- dual-band
- electrostatic discharge (ESD) protection
- millimeter-wave (MMW)
- radio frequency (RF)
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Safety, Risk, Reliability and Quality
- Electrical and Electronic Engineering