Design of differential low-noise amplifier with cross-coupled-SCR ESD protection scheme

Chun Yu Lin*, Ming Dou Ker, Yuan Wen Hsiao

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)


The pin-to-pin electrostatic discharge (ESD) stress was one of the most critical ESD events for differential input pads. The pin-to-pin ESD issue for a differential low-noise amplifier (LNA) was studied in this work. A new ESD protection scheme for differential input pads, which was realized with cross-coupled silicon-controlled rectifier (SCR), was proposed to protect the differential LNA. The cross-coupled-SCR ESD protection scheme was modified from the conventional double-diode ESD protection scheme without adding any extra device. The SCR path was established directly from one differential input pad to the other differential input pad in this cross-coupled-SCR ESD protection scheme, so the pin-to-pin ESD robustness can be improved. The test circuits had been fabricated in a 130-nm CMOS process. Under pin-to-pin ESD stresses, the human-body-model (HBM) and machine-model (MM) ESD levels of the differential LNA with the cross-coupled-SCR ESD protection scheme are >8 kV and 800 V, respectively. Experimental results had shown that the new proposed ESD protection scheme for the differential LNA can achieve excellent ESD robustness and good RF performances.

Original languageEnglish
Pages (from-to)831-838
Number of pages8
JournalMicroelectronics Reliability
Issue number6
Publication statusPublished - 2010 Jun
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Safety, Risk, Reliability and Quality
  • Surfaces, Coatings and Films
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering


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