Design of a 9-25 GHz broadband low noise amplifier using 0.15-μm GaAs HEMT process

Jeng-Han Tsai, Ji Yang Lin, Kun Yao Ding

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

A 9-25 GHz low noise amplifier (LNA) is design and implemented in 0.15-μm GaAs HEMT process. Utilizing a resistive feed-back technique, the two-stage common source LNA achieves a broadband and flat frequency response. The measured small-signal gain is 20 ± 1.5 dB from 9-25 GHz and the 3-dB bandwidth is 94 %. With the feature of the resistive feed-back technique, the LNA achieves a 1-dB bandwidth up to 53.3 % from 11 to 19 GHz with flat gain frequency response of 21 ± 0.5 dB. The noise figure is 3.5 ± 0.5 from 9 to 21 GHz. The chip size is only 1.5 mm x 1 mm.

Original languageEnglish
Title of host publication2012 International Conference on Microwave and Millimeter Wave Technology, ICMMT 2012 - Proceedings
Pages1654-1657
Number of pages4
DOIs
Publication statusPublished - 2012 Aug 10
Event2012 International Conference on Microwave and Millimeter Wave Technology, ICMMT 2012 - Shenzhen, China
Duration: 2012 May 52012 May 8

Publication series

Name2012 International Conference on Microwave and Millimeter Wave Technology, ICMMT 2012 - Proceedings
Volume5

Other

Other2012 International Conference on Microwave and Millimeter Wave Technology, ICMMT 2012
CountryChina
CityShenzhen
Period12/5/512/5/8

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Keywords

  • GaAs
  • Low noise amplifier (LNA)
  • Monolithic microwave integrated circuit (MMIC)
  • broadband
  • pHEMT

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Tsai, J-H., Lin, J. Y., & Ding, K. Y. (2012). Design of a 9-25 GHz broadband low noise amplifier using 0.15-μm GaAs HEMT process. In 2012 International Conference on Microwave and Millimeter Wave Technology, ICMMT 2012 - Proceedings (pp. 1654-1657). [6230368] (2012 International Conference on Microwave and Millimeter Wave Technology, ICMMT 2012 - Proceedings; Vol. 5). https://doi.org/10.1109/ICMMT.2012.6230368