Design of 2.4-GHz T/R switch with embedded ESD protection devices in CMOS process

Chun Yu Lin*, Rui Hong Liu, Ming Dou Ker

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review


As CMOS processes advanced, the integration of radio-frequency (RF) integrated circuits was increasing. In order to protect the fully-integrated RF transceiver from electrostatic discharge (ESD) damage, the transmit/receive (T/R) switch of transceiver frond-end should be carefully designed to bypass the ESD current. This work presented a technique of embedded ESD protection device to enhance the ESD capability of T/R switch. The embedded ESD protection devices of diodes and silicon-controlled rectifier (SCR) are generated between the transistors in T/R switch without using additional ESD protection device. The design procedure of RF circuits without ESD protection device can be simplified. The test circuits of 2.4-GHz transceiver frond-end with T/R switch, PA, and LNA have been integrated and implemented in nanoscale CMOS process to test their performances during RF operations and ESD stresses. The test results confirm that the embedded ESD protection devices can provide sufficient ESD protection capability and it is free from degrading circuit performances.

Original languageEnglish
Pages (from-to)258-266
Number of pages9
JournalMicroelectronics Reliability
Publication statusPublished - 2017 Nov


  • Diodes
  • Electrostatic discharges (ESD)
  • Radio-frequency (RF)
  • Silicon-controlled rectifier (SCR)
  • Transceiver
  • Transmit/receive (T/R) switch

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Safety, Risk, Reliability and Quality
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering


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