Design and implementation of configurable ESD protection cell for 60-GHz RF circuits in a 65-nm CMOS process

Chun Yu Lin, Li Wei Chu, Ming Dou Ker

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

The configurable electrostatic discharge (ESD) protection cells have been implemented in a commercial 65-nm CMOS process for 60-GHz RF applications. The distributed ESD protection scheme was modified to be used in this work. With the consideration of parasitic capacitance from I/O pad, the ESD protection cells have reached the 50-Ω input/output matching to reduce the design complexity for RF circuit designer and to provide suitable ESD protection. Experimental results of these ESD protection cells have successfully verified the ESD robustness and the RF characteristics in the 60-GHz frequency band. These ESD protection cells can easily be used for ESD protection design in the 60-GHz RF applications, and accelerate the design cycle.

Original languageEnglish
Pages (from-to)1315-1324
Number of pages10
JournalMicroelectronics Reliability
Volume51
Issue number8
DOIs
Publication statusPublished - 2011 Aug 1

Fingerprint

Electrostatic discharge
CMOS
electrostatics
Networks (circuits)
cells
Frequency bands
Capacitance
capacitance
cycles
output

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Safety, Risk, Reliability and Quality
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

Cite this

Design and implementation of configurable ESD protection cell for 60-GHz RF circuits in a 65-nm CMOS process. / Lin, Chun Yu; Chu, Li Wei; Ker, Ming Dou.

In: Microelectronics Reliability, Vol. 51, No. 8, 01.08.2011, p. 1315-1324.

Research output: Contribution to journalArticle

@article{b551aed1a40c499e863954f8314af122,
title = "Design and implementation of configurable ESD protection cell for 60-GHz RF circuits in a 65-nm CMOS process",
abstract = "The configurable electrostatic discharge (ESD) protection cells have been implemented in a commercial 65-nm CMOS process for 60-GHz RF applications. The distributed ESD protection scheme was modified to be used in this work. With the consideration of parasitic capacitance from I/O pad, the ESD protection cells have reached the 50-Ω input/output matching to reduce the design complexity for RF circuit designer and to provide suitable ESD protection. Experimental results of these ESD protection cells have successfully verified the ESD robustness and the RF characteristics in the 60-GHz frequency band. These ESD protection cells can easily be used for ESD protection design in the 60-GHz RF applications, and accelerate the design cycle.",
author = "Lin, {Chun Yu} and Chu, {Li Wei} and Ker, {Ming Dou}",
year = "2011",
month = "8",
day = "1",
doi = "10.1016/j.microrel.2011.03.016",
language = "English",
volume = "51",
pages = "1315--1324",
journal = "Microelectronics and Reliability",
issn = "0026-2714",
publisher = "Elsevier Limited",
number = "8",

}

TY - JOUR

T1 - Design and implementation of configurable ESD protection cell for 60-GHz RF circuits in a 65-nm CMOS process

AU - Lin, Chun Yu

AU - Chu, Li Wei

AU - Ker, Ming Dou

PY - 2011/8/1

Y1 - 2011/8/1

N2 - The configurable electrostatic discharge (ESD) protection cells have been implemented in a commercial 65-nm CMOS process for 60-GHz RF applications. The distributed ESD protection scheme was modified to be used in this work. With the consideration of parasitic capacitance from I/O pad, the ESD protection cells have reached the 50-Ω input/output matching to reduce the design complexity for RF circuit designer and to provide suitable ESD protection. Experimental results of these ESD protection cells have successfully verified the ESD robustness and the RF characteristics in the 60-GHz frequency band. These ESD protection cells can easily be used for ESD protection design in the 60-GHz RF applications, and accelerate the design cycle.

AB - The configurable electrostatic discharge (ESD) protection cells have been implemented in a commercial 65-nm CMOS process for 60-GHz RF applications. The distributed ESD protection scheme was modified to be used in this work. With the consideration of parasitic capacitance from I/O pad, the ESD protection cells have reached the 50-Ω input/output matching to reduce the design complexity for RF circuit designer and to provide suitable ESD protection. Experimental results of these ESD protection cells have successfully verified the ESD robustness and the RF characteristics in the 60-GHz frequency band. These ESD protection cells can easily be used for ESD protection design in the 60-GHz RF applications, and accelerate the design cycle.

UR - http://www.scopus.com/inward/record.url?scp=79959875850&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79959875850&partnerID=8YFLogxK

U2 - 10.1016/j.microrel.2011.03.016

DO - 10.1016/j.microrel.2011.03.016

M3 - Article

AN - SCOPUS:79959875850

VL - 51

SP - 1315

EP - 1324

JO - Microelectronics and Reliability

JF - Microelectronics and Reliability

SN - 0026-2714

IS - 8

ER -