Design and analysis of a 55-71-GHz compact and broadband distributed active transformer power amplifier in 90-nm CMOS process

Yung Nien Jen, Jeng Han Tsai, Tian Wei Huang, Huei Wang

Research output: Contribution to journalArticle

46 Citations (Scopus)

Abstract

A 5571-GHz fully integrated power amplifier (PA) using a distributed active transformer (DAT) is implemented in 90-nm RF/MS CMOS technology. The DAT combiner, featuring efficient power combination and direct impedance transformation, is suitable for millimeter-wave (MMW) PA design. Systematic design procedures including an impedance allocation plan, a compensation line, and a gain boosting technique are presented for the MMW DAT PA. The monolithic microwave integrated circuit (MMIC) performs a high and flat small-signal gain of 26 ± 1.5 dB from 55 to 71 GHz, which covers a full band for 60-GHz wireless personal area network applications. sing cascode devices and a DAT four-way power combination, the CMOS PA delivers 14.5- and 18-dBm saturated output power with 10.2% and 12.2% power-added efficiency under 1.8- and 3-V supply voltage, respectively, at 60 GHz. The maximum linear output power ( P1 dB) is 14.5 dBm. To the best of our knowledge, the MMIC is the first demonstration of a V -band CMOS PA using a DAT combining scheme with highest linear output power among the reported 60-GHz CMOS PAs to date.

Original languageEnglish
Article number4967867
Pages (from-to)1637-1646
Number of pages10
JournalIEEE Transactions on Microwave Theory and Techniques
Volume57
Issue number7
DOIs
Publication statusPublished - 2009 Jul 1

Keywords

  • CMOS
  • Distributed active transformer (DAT)
  • Gain boosting
  • Power amplifier (PA)
  • V -band

ASJC Scopus subject areas

  • Radiation
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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