Depth profiling the electronic structures at HfO2/Si interface grown by molecular beam epitaxy

T. S. Lay; S. C. Chang; G. J. Din; C. C. Yeh; W. H. Hung; W. G. Lee; J. Kwo; M. Hong

doi:10.1116/1.1881633

Depth profiling the electronic structures at HfO₂/Si interface grown by molecular beam epitaxy

T. S. Lay^*, S. C. Chang, G. J. Din, C. C. Yeh, W. H. Hung, W. G. Lee, J. Kwo, M. Hong

^*Corresponding author for this work

Department of Chemistry

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

The depth profile of the HfO2 Si interface grown by molecular beam epitaxy (MBE) has been investigated by high-resolution x-ray photoelectron spectroscopy using synchrotron radiation beam and low energy Ar+ sputtering. At the interfacial layer, the Hf 4f spectra show a Hf silicide state without a Hf silicate signal. The O 1s and Si 2p spectra show weakly two silicon oxidation states of SiO and SiO2. The data suggest an inward reaction of the Hf and O species into the Si substrate during the MBE growth. The valence band offset (Δ EV) of ∼3.5 eV is obtained for the HfO2 Si interface by measuring the valence-band edges of HfO2 and Si.

Original language	English
Pages (from-to)	1291-1293
Number of pages	3
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	23
Issue number	3
DOIs	https://doi.org/10.1116/1.1881633
Publication status	Published - 2005

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

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@article{6961bf7425e148b2851aca27767582fd,

title = "Depth profiling the electronic structures at HfO2/Si interface grown by molecular beam epitaxy",

abstract = "The depth profile of the HfO2 Si interface grown by molecular beam epitaxy (MBE) has been investigated by high-resolution x-ray photoelectron spectroscopy using synchrotron radiation beam and low energy Ar+ sputtering. At the interfacial layer, the Hf 4f spectra show a Hf silicide state without a Hf silicate signal. The O 1s and Si 2p spectra show weakly two silicon oxidation states of SiO and SiO2. The data suggest an inward reaction of the Hf and O species into the Si substrate during the MBE growth. The valence band offset (Δ EV) of ∼3.5 eV is obtained for the HfO2 Si interface by measuring the valence-band edges of HfO2 and Si.",

author = "Lay, {T. S.} and Chang, {S. C.} and Din, {G. J.} and Yeh, {C. C.} and Hung, {W. H.} and Lee, {W. G.} and J. Kwo and M. Hong",

note = "Funding Information: One of the authors (T.S.L.) would like to thank the supports from the MOE Program for Promoting University Academic Excellence under Grant No. 91-E-FA08-1-4, and the National Science Council of Taiwan through funding Grants No. NSC-92-2215-E-110-008. Facility support from the NSRRC is gratefully acknowledged. ",

year = "2005",

doi = "10.1116/1.1881633",

language = "English",

volume = "23",

pages = "1291--1293",

journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",

issn = "1071-1023",

publisher = "AVS Science and Technology Society",

number = "3",

}

TY - JOUR

T1 - Depth profiling the electronic structures at HfO2/Si interface grown by molecular beam epitaxy

AU - Lay, T. S.

AU - Chang, S. C.

AU - Din, G. J.

AU - Yeh, C. C.

AU - Hung, W. H.

AU - Lee, W. G.

AU - Kwo, J.

AU - Hong, M.

N1 - Funding Information: One of the authors (T.S.L.) would like to thank the supports from the MOE Program for Promoting University Academic Excellence under Grant No. 91-E-FA08-1-4, and the National Science Council of Taiwan through funding Grants No. NSC-92-2215-E-110-008. Facility support from the NSRRC is gratefully acknowledged.

PY - 2005

Y1 - 2005

N2 - The depth profile of the HfO2 Si interface grown by molecular beam epitaxy (MBE) has been investigated by high-resolution x-ray photoelectron spectroscopy using synchrotron radiation beam and low energy Ar+ sputtering. At the interfacial layer, the Hf 4f spectra show a Hf silicide state without a Hf silicate signal. The O 1s and Si 2p spectra show weakly two silicon oxidation states of SiO and SiO2. The data suggest an inward reaction of the Hf and O species into the Si substrate during the MBE growth. The valence band offset (Δ EV) of ∼3.5 eV is obtained for the HfO2 Si interface by measuring the valence-band edges of HfO2 and Si.

AB - The depth profile of the HfO2 Si interface grown by molecular beam epitaxy (MBE) has been investigated by high-resolution x-ray photoelectron spectroscopy using synchrotron radiation beam and low energy Ar+ sputtering. At the interfacial layer, the Hf 4f spectra show a Hf silicide state without a Hf silicate signal. The O 1s and Si 2p spectra show weakly two silicon oxidation states of SiO and SiO2. The data suggest an inward reaction of the Hf and O species into the Si substrate during the MBE growth. The valence band offset (Δ EV) of ∼3.5 eV is obtained for the HfO2 Si interface by measuring the valence-band edges of HfO2 and Si.

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JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

IS - 3

ER -

Depth profiling the electronic structures at HfO₂/Si interface grown by molecular beam epitaxy

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