Depth profiling the electronic structures at HfO2/Si interface grown by molecular beam epitaxy

T. S. Lay, S. C. Chang, G. J. Din, C. C. Yeh, W. H. Hung, W. G. Lee, J. Kwo, M. Hong

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

The depth profile of the HfO2 Si interface grown by molecular beam epitaxy (MBE) has been investigated by high-resolution x-ray photoelectron spectroscopy using synchrotron radiation beam and low energy Ar+ sputtering. At the interfacial layer, the Hf 4f spectra show a Hf silicide state without a Hf silicate signal. The O 1s and Si 2p spectra show weakly two silicon oxidation states of SiO and SiO2. The data suggest an inward reaction of the Hf and O species into the Si substrate during the MBE growth. The valence band offset (Δ EV) of ∼3.5 eV is obtained for the HfO2 Si interface by measuring the valence-band edges of HfO2 and Si.

Original languageEnglish
Pages (from-to)1291-1293
Number of pages3
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume23
Issue number3
DOIs
Publication statusPublished - 2005 Dec 1

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Depth profiling
Valence bands
Molecular beam epitaxy
Electronic structure
molecular beam epitaxy
electronic structure
valence
Photoelectron spectroscopy
Synchrotron radiation
x ray spectroscopy
Silicates
Sputtering
silicates
synchrotron radiation
sputtering
photoelectron spectroscopy
X rays
Silicon
Oxidation
oxidation

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

Depth profiling the electronic structures at HfO2/Si interface grown by molecular beam epitaxy. / Lay, T. S.; Chang, S. C.; Din, G. J.; Yeh, C. C.; Hung, W. H.; Lee, W. G.; Kwo, J.; Hong, M.

In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 23, No. 3, 01.12.2005, p. 1291-1293.

Research output: Contribution to journalArticle

Lay, T. S. ; Chang, S. C. ; Din, G. J. ; Yeh, C. C. ; Hung, W. H. ; Lee, W. G. ; Kwo, J. ; Hong, M. / Depth profiling the electronic structures at HfO2/Si interface grown by molecular beam epitaxy. In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 2005 ; Vol. 23, No. 3. pp. 1291-1293.
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AU - Lay, T. S.

AU - Chang, S. C.

AU - Din, G. J.

AU - Yeh, C. C.

AU - Hung, W. H.

AU - Lee, W. G.

AU - Kwo, J.

AU - Hong, M.

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AB - The depth profile of the HfO2 Si interface grown by molecular beam epitaxy (MBE) has been investigated by high-resolution x-ray photoelectron spectroscopy using synchrotron radiation beam and low energy Ar+ sputtering. At the interfacial layer, the Hf 4f spectra show a Hf silicide state without a Hf silicate signal. The O 1s and Si 2p spectra show weakly two silicon oxidation states of SiO and SiO2. The data suggest an inward reaction of the Hf and O species into the Si substrate during the MBE growth. The valence band offset (Δ EV) of ∼3.5 eV is obtained for the HfO2 Si interface by measuring the valence-band edges of HfO2 and Si.

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