Depth profiles of MeV C+ and C2+ ions implanted in III-V semiconductors

T. R. Yang; G. Kuri; D. Fink

doi:10.1016/S0921-5107(99)00480-8

Depth profiles of MeV C⁺ and C₂⁺ ions implanted in III-V semiconductors

T. R. Yang
, G. Kuri^*
, D. Fink

^*Corresponding author for this work

Department of Physics

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

A study has been made to investigate the depth profiles of MeV C atoms implanted in a few common III-V semiconducting targets. Single crystal substrates of GaP, GaAs, GaSb, InP and InSb were used in the present study. They were implanted with C⁺ and C₂ ⁺ ions at implantation energies of 1.00 and 2.00 MeV respectively, and a dose of 5×10¹⁴ C-atoms cm^-2. The projected range and longitudinal straggling of the implanted C atoms have been measured by the secondary ion mass spectroscopy (SIMS) technique and compared with the theoretical predictions. The measured range parameters of C⁺ ions agree moderately well with the theory (TRIM) but the longitudinal straggling is significantly greater in the case of C₂ ⁺ implantations. In this case the measured R_p values are also slightly lower as compared to that target implanted with C⁺ ions. A tentative explanation for these results is presented.

Original language	English
Pages (from-to)	143-148
Number of pages	6
Journal	Materials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume	68
Issue number	3
DOIs	https://doi.org/10.1016/S0921-5107(99)00480-8
Publication status	Published - 2000 Jan 3

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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title = "Depth profiles of MeV C+ and C2+ ions implanted in III-V semiconductors",

abstract = "A study has been made to investigate the depth profiles of MeV C atoms implanted in a few common III-V semiconducting targets. Single crystal substrates of GaP, GaAs, GaSb, InP and InSb were used in the present study. They were implanted with C+ and C2 + ions at implantation energies of 1.00 and 2.00 MeV respectively, and a dose of 5×1014 C-atoms cm-2. The projected range and longitudinal straggling of the implanted C atoms have been measured by the secondary ion mass spectroscopy (SIMS) technique and compared with the theoretical predictions. The measured range parameters of C+ ions agree moderately well with the theory (TRIM) but the longitudinal straggling is significantly greater in the case of C2 + implantations. In this case the measured Rp values are also slightly lower as compared to that target implanted with C+ ions. A tentative explanation for these results is presented.",

author = "Yang, \{T. R.\} and G. Kuri and D. Fink",

note = "Funding Information: T.R.Y. and G.K. acknowledge the National Science Council, PR China (Taiwan) for financial support. We are also grateful to Profs D.P. Mahapatra, B.N. Dev, S.N. Behera, M. Guchait, K.J. Kim and D.W. Moon for their assistance to carry out this work and many useful suggestions. ",

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doi = "10.1016/S0921-5107(99)00480-8",

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T1 - Depth profiles of MeV C+ and C2+ ions implanted in III-V semiconductors

AU - Yang, T. R.

AU - Kuri, G.

AU - Fink, D.

N1 - Funding Information: T.R.Y. and G.K. acknowledge the National Science Council, PR China (Taiwan) for financial support. We are also grateful to Profs D.P. Mahapatra, B.N. Dev, S.N. Behera, M. Guchait, K.J. Kim and D.W. Moon for their assistance to carry out this work and many useful suggestions.

PY - 2000/1/3

Y1 - 2000/1/3

N2 - A study has been made to investigate the depth profiles of MeV C atoms implanted in a few common III-V semiconducting targets. Single crystal substrates of GaP, GaAs, GaSb, InP and InSb were used in the present study. They were implanted with C+ and C2 + ions at implantation energies of 1.00 and 2.00 MeV respectively, and a dose of 5×1014 C-atoms cm-2. The projected range and longitudinal straggling of the implanted C atoms have been measured by the secondary ion mass spectroscopy (SIMS) technique and compared with the theoretical predictions. The measured range parameters of C+ ions agree moderately well with the theory (TRIM) but the longitudinal straggling is significantly greater in the case of C2 + implantations. In this case the measured Rp values are also slightly lower as compared to that target implanted with C+ ions. A tentative explanation for these results is presented.

AB - A study has been made to investigate the depth profiles of MeV C atoms implanted in a few common III-V semiconducting targets. Single crystal substrates of GaP, GaAs, GaSb, InP and InSb were used in the present study. They were implanted with C+ and C2 + ions at implantation energies of 1.00 and 2.00 MeV respectively, and a dose of 5×1014 C-atoms cm-2. The projected range and longitudinal straggling of the implanted C atoms have been measured by the secondary ion mass spectroscopy (SIMS) technique and compared with the theoretical predictions. The measured range parameters of C+ ions agree moderately well with the theory (TRIM) but the longitudinal straggling is significantly greater in the case of C2 + implantations. In this case the measured Rp values are also slightly lower as compared to that target implanted with C+ ions. A tentative explanation for these results is presented.

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U2 - 10.1016/S0921-5107(99)00480-8

DO - 10.1016/S0921-5107(99)00480-8

M3 - Article

AN - SCOPUS:0033882306

SN - 0921-5107

VL - 68

SP - 143

EP - 148

JO - Materials Science and Engineering B: Solid-State Materials for Advanced Technology

JF - Materials Science and Engineering B: Solid-State Materials for Advanced Technology

IS - 3

ER -

Depth profiles of MeV C⁺ and C₂⁺ ions implanted in III-V semiconductors

Abstract

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