Depth profiles of MeV C+ and C2+ ions implanted in III-V semiconductors

T. R. Yang, G. Kuri, D. Fink

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Abstract

A study has been made to investigate the depth profiles of MeV C atoms implanted in a few common III-V semiconducting targets. Single crystal substrates of GaP, GaAs, GaSb, InP and InSb were used in the present study. They were implanted with C+ and C2 + ions at implantation energies of 1.00 and 2.00 MeV respectively, and a dose of 5×1014 C-atoms cm-2. The projected range and longitudinal straggling of the implanted C atoms have been measured by the secondary ion mass spectroscopy (SIMS) technique and compared with the theoretical predictions. The measured range parameters of C+ ions agree moderately well with the theory (TRIM) but the longitudinal straggling is significantly greater in the case of C2 + implantations. In this case the measured Rp values are also slightly lower as compared to that target implanted with C+ ions. A tentative explanation for these results is presented.

Original languageEnglish
Pages (from-to)143-148
Number of pages6
JournalMaterials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume68
Issue number3
DOIs
Publication statusPublished - 2000 Jan 3

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ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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