Abstract
A study has been made to investigate the depth profiles of MeV C atoms implanted in a few common III-V semiconducting targets. Single crystal substrates of GaP, GaAs, GaSb, InP and InSb were used in the present study. They were implanted with C+ and C2 + ions at implantation energies of 1.00 and 2.00 MeV respectively, and a dose of 5×1014 C-atoms cm-2. The projected range and longitudinal straggling of the implanted C atoms have been measured by the secondary ion mass spectroscopy (SIMS) technique and compared with the theoretical predictions. The measured range parameters of C+ ions agree moderately well with the theory (TRIM) but the longitudinal straggling is significantly greater in the case of C2 + implantations. In this case the measured Rp values are also slightly lower as compared to that target implanted with C+ ions. A tentative explanation for these results is presented.
| Original language | English |
|---|---|
| Pages (from-to) | 143-148 |
| Number of pages | 6 |
| Journal | Materials Science and Engineering B: Solid-State Materials for Advanced Technology |
| Volume | 68 |
| Issue number | 3 |
| DOIs | |
| Publication status | Published - 2000 Jan 3 |
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ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering
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Depth profiles of MeV C+ and C2+ ions implanted in III-V semiconductors. / Yang, Tzuen-Rong; Kuri, G.; Fink, D.
In: Materials Science and Engineering B: Solid-State Materials for Advanced Technology, Vol. 68, No. 3, 03.01.2000, p. 143-148.Research output: Contribution to journal › Article
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TY - JOUR
T1 - Depth profiles of MeV C+ and C2+ ions implanted in III-V semiconductors
AU - Yang, Tzuen-Rong
AU - Kuri, G.
AU - Fink, D.
PY - 2000/1/3
Y1 - 2000/1/3
N2 - A study has been made to investigate the depth profiles of MeV C atoms implanted in a few common III-V semiconducting targets. Single crystal substrates of GaP, GaAs, GaSb, InP and InSb were used in the present study. They were implanted with C+ and C2 + ions at implantation energies of 1.00 and 2.00 MeV respectively, and a dose of 5×1014 C-atoms cm-2. The projected range and longitudinal straggling of the implanted C atoms have been measured by the secondary ion mass spectroscopy (SIMS) technique and compared with the theoretical predictions. The measured range parameters of C+ ions agree moderately well with the theory (TRIM) but the longitudinal straggling is significantly greater in the case of C2 + implantations. In this case the measured Rp values are also slightly lower as compared to that target implanted with C+ ions. A tentative explanation for these results is presented.
AB - A study has been made to investigate the depth profiles of MeV C atoms implanted in a few common III-V semiconducting targets. Single crystal substrates of GaP, GaAs, GaSb, InP and InSb were used in the present study. They were implanted with C+ and C2 + ions at implantation energies of 1.00 and 2.00 MeV respectively, and a dose of 5×1014 C-atoms cm-2. The projected range and longitudinal straggling of the implanted C atoms have been measured by the secondary ion mass spectroscopy (SIMS) technique and compared with the theoretical predictions. The measured range parameters of C+ ions agree moderately well with the theory (TRIM) but the longitudinal straggling is significantly greater in the case of C2 + implantations. In this case the measured Rp values are also slightly lower as compared to that target implanted with C+ ions. A tentative explanation for these results is presented.
UR - http://www.scopus.com/inward/record.url?scp=0033882306&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0033882306&partnerID=8YFLogxK
U2 - 10.1016/S0921-5107(99)00480-8
DO - 10.1016/S0921-5107(99)00480-8
M3 - Article
AN - SCOPUS:0033882306
VL - 68
SP - 143
EP - 148
JO - Materials Science and Engineering B: Solid-State Materials for Advanced Technology
JF - Materials Science and Engineering B: Solid-State Materials for Advanced Technology
SN - 0921-5107
IS - 3
ER -