TY - JOUR
T1 - Depth profiles of MeV C+ and C2+ ions implanted in III-V semiconductors
AU - Yang, T. R.
AU - Kuri, G.
AU - Fink, D.
N1 - Funding Information:
T.R.Y. and G.K. acknowledge the National Science Council, PR China (Taiwan) for financial support. We are also grateful to Profs D.P. Mahapatra, B.N. Dev, S.N. Behera, M. Guchait, K.J. Kim and D.W. Moon for their assistance to carry out this work and many useful suggestions.
Copyright:
Copyright 2017 Elsevier B.V., All rights reserved.
PY - 2000/1/3
Y1 - 2000/1/3
N2 - A study has been made to investigate the depth profiles of MeV C atoms implanted in a few common III-V semiconducting targets. Single crystal substrates of GaP, GaAs, GaSb, InP and InSb were used in the present study. They were implanted with C+ and C2 + ions at implantation energies of 1.00 and 2.00 MeV respectively, and a dose of 5×1014 C-atoms cm-2. The projected range and longitudinal straggling of the implanted C atoms have been measured by the secondary ion mass spectroscopy (SIMS) technique and compared with the theoretical predictions. The measured range parameters of C+ ions agree moderately well with the theory (TRIM) but the longitudinal straggling is significantly greater in the case of C2 + implantations. In this case the measured Rp values are also slightly lower as compared to that target implanted with C+ ions. A tentative explanation for these results is presented.
AB - A study has been made to investigate the depth profiles of MeV C atoms implanted in a few common III-V semiconducting targets. Single crystal substrates of GaP, GaAs, GaSb, InP and InSb were used in the present study. They were implanted with C+ and C2 + ions at implantation energies of 1.00 and 2.00 MeV respectively, and a dose of 5×1014 C-atoms cm-2. The projected range and longitudinal straggling of the implanted C atoms have been measured by the secondary ion mass spectroscopy (SIMS) technique and compared with the theoretical predictions. The measured range parameters of C+ ions agree moderately well with the theory (TRIM) but the longitudinal straggling is significantly greater in the case of C2 + implantations. In this case the measured Rp values are also slightly lower as compared to that target implanted with C+ ions. A tentative explanation for these results is presented.
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U2 - 10.1016/S0921-5107(99)00480-8
DO - 10.1016/S0921-5107(99)00480-8
M3 - Article
AN - SCOPUS:0033882306
VL - 68
SP - 143
EP - 148
JO - Materials Science and Engineering B: Solid-State Materials for Advanced Technology
JF - Materials Science and Engineering B: Solid-State Materials for Advanced Technology
SN - 0921-5107
IS - 3
ER -