Depth profiles of MeV C+ and C2+ ions implanted in III-V semiconductors

T. R. Yang; G. Kuri; D. Fink

doi:10.1016/S0921-5107(99)00480-8

Depth profiles of MeV C⁺ and C₂⁺ ions implanted in III-V semiconductors

T. R. Yang, G. Kuri, D. Fink

Department of Physics

Research output: Contribution to journal › Article

2 Citations (Scopus)

Abstract

A study has been made to investigate the depth profiles of MeV C atoms implanted in a few common III-V semiconducting targets. Single crystal substrates of GaP, GaAs, GaSb, InP and InSb were used in the present study. They were implanted with C⁺ and C₂ ⁺ ions at implantation energies of 1.00 and 2.00 MeV respectively, and a dose of 5×10¹⁴ C-atoms cm^-2. The projected range and longitudinal straggling of the implanted C atoms have been measured by the secondary ion mass spectroscopy (SIMS) technique and compared with the theoretical predictions. The measured range parameters of C⁺ ions agree moderately well with the theory (TRIM) but the longitudinal straggling is significantly greater in the case of C₂ ⁺ implantations. In this case the measured R_p values are also slightly lower as compared to that target implanted with C⁺ ions. A tentative explanation for these results is presented.

Original language	English
Pages (from-to)	143-148
Number of pages	6
Journal	Materials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume	68
Issue number	3
DOIs	https://doi.org/10.1016/S0921-5107(99)00480-8
Publication status	Published - 2000 Jan 3

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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Yang, T. R., Kuri, G., & Fink, D. (2000). Depth profiles of MeV C⁺ and C₂⁺ ions implanted in III-V semiconductors. Materials Science and Engineering B: Solid-State Materials for Advanced Technology, 68(3), 143-148. https://doi.org/10.1016/S0921-5107(99)00480-8

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abstract = "A study has been made to investigate the depth profiles of MeV C atoms implanted in a few common III-V semiconducting targets. Single crystal substrates of GaP, GaAs, GaSb, InP and InSb were used in the present study. They were implanted with C+ and C2 + ions at implantation energies of 1.00 and 2.00 MeV respectively, and a dose of 5×1014 C-atoms cm-2. The projected range and longitudinal straggling of the implanted C atoms have been measured by the secondary ion mass spectroscopy (SIMS) technique and compared with the theoretical predictions. The measured range parameters of C+ ions agree moderately well with the theory (TRIM) but the longitudinal straggling is significantly greater in the case of C2 + implantations. In this case the measured Rp values are also slightly lower as compared to that target implanted with C+ ions. A tentative explanation for these results is presented.",

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N2 - A study has been made to investigate the depth profiles of MeV C atoms implanted in a few common III-V semiconducting targets. Single crystal substrates of GaP, GaAs, GaSb, InP and InSb were used in the present study. They were implanted with C+ and C2 + ions at implantation energies of 1.00 and 2.00 MeV respectively, and a dose of 5×1014 C-atoms cm-2. The projected range and longitudinal straggling of the implanted C atoms have been measured by the secondary ion mass spectroscopy (SIMS) technique and compared with the theoretical predictions. The measured range parameters of C+ ions agree moderately well with the theory (TRIM) but the longitudinal straggling is significantly greater in the case of C2 + implantations. In this case the measured Rp values are also slightly lower as compared to that target implanted with C+ ions. A tentative explanation for these results is presented.

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