Depth profiles and chemical bonding states of graded doping and ultra-thin HfLaO high-k dielectrics deposited on silicon substrate

Pi Chun Juan, Chuan-Hsi Liu, Min Jou, Yi Kuan Chen, Yu Wei Liu, Chih Wei Hsu, Yi Hsien Chou, Jun You Lin

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

La dopant positioning at HfO 2 ultra-thin films was successfully achieved by the co-sputtering method. The depth profiles of graded doping HfLaO (7 nm)/p-Si structures after 850°C RTA were studied. From the nano-AES results, the out-diffusion of Hf atom into Si substrate increases when the La dopant is co-deposited in the upper bond and forming HfLaO/HfO 2 /Si structures. On the other hand, the out-diffusion of Hf atoms into Si substrate is suppressed when the La is doped in the lower bond and forming HfO 2 /HfLaO/Si structures. It is found that the chance to form silicate becomes insignificant due to less oxygen out-diffusion into Si in the later case. Above is consistent with the binding energies of our XPS results. The electrical properties of different doping locations were measured and compared. The thickness of silicate layer is suggested to be the origin of leakage current.

Original languageEnglish
Title of host publicationINEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings
Pages672-673
Number of pages2
DOIs
Publication statusPublished - 2010 May 5
Event2010 3rd International Nanoelectronics Conference, INEC 2010 - Hongkong, China
Duration: 2010 Jan 32010 Jan 8

Publication series

NameINEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings

Other

Other2010 3rd International Nanoelectronics Conference, INEC 2010
CountryChina
CityHongkong
Period10/1/310/1/8

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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  • Cite this

    Juan, P. C., Liu, C-H., Jou, M., Chen, Y. K., Liu, Y. W., Hsu, C. W., Chou, Y. H., & Lin, J. Y. (2010). Depth profiles and chemical bonding states of graded doping and ultra-thin HfLaO high-k dielectrics deposited on silicon substrate. In INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings (pp. 672-673). [5424647] (INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings). https://doi.org/10.1109/INEC.2010.5424647