TY - JOUR
T1 - Depth-profile study of the electronic structures at Ga2O 3(Gd2O3) and Gd2O3-GaN interfaces by X-ray photoelectron spectroscopy
AU - Lay, T. S.
AU - Liao, Y. Y.
AU - Hung, W. H.
AU - Hong, M.
AU - Kwo, J.
AU - Mannaerts, J. P.
N1 - Funding Information:
One of us (TSL) would like to thank the supports from the MOE Program for Promoting University Academic Excellence under Grant no. 91-E-FA08-1-4, and the National Science Council of Taiwan through funding Grants NSC-92-2215-E-110-008. Facility support at the NSRRC is gratefully acknowledged.
PY - 2005/5/1
Y1 - 2005/5/1
N2 - The depth profile of high-resolution photoelectron spectra at Ga 2O3(Gd2O3)-GaN and Gd 2O3-GaN interfaces grown by molecular beam epitaxy (MBE) has been obtained by using synchrotron radiation beam and low-energy Ar + sputtering. The data indicate that both of the oxide layers are highly hygroscopic with the observation of O-H bonding. The valence-band offsets (ΔEV) of ∼1.1 and 1.0 eV were also measured for the Ga 2O3(Gd2O3)-GaN and Gd 2O3-GaN interfaces, respectively.
AB - The depth profile of high-resolution photoelectron spectra at Ga 2O3(Gd2O3)-GaN and Gd 2O3-GaN interfaces grown by molecular beam epitaxy (MBE) has been obtained by using synchrotron radiation beam and low-energy Ar + sputtering. The data indicate that both of the oxide layers are highly hygroscopic with the observation of O-H bonding. The valence-band offsets (ΔEV) of ∼1.1 and 1.0 eV were also measured for the Ga 2O3(Gd2O3)-GaN and Gd 2O3-GaN interfaces, respectively.
KW - A1. Interfaces
KW - A3. Molecular beam epitaxy
KW - B1. Gadolinium compounds
KW - B1. Nitrides
KW - B2. Dielectric materials
KW - B2. Semiconducting gallium compounds
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U2 - 10.1016/j.jcrysgro.2004.12.128
DO - 10.1016/j.jcrysgro.2004.12.128
M3 - Conference article
AN - SCOPUS:18444388307
SN - 0022-0248
VL - 278
SP - 624
EP - 628
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
IS - 1-4
T2 - 13th International Conference on Molecular Beam Epitaxy
Y2 - 22 August 2004 through 27 August 2004
ER -