Depth-profile study of the electronic structures at Ga2O 3(Gd2O3) and Gd2O3-GaN interfaces by X-ray photoelectron spectroscopy

T. S. Lay; Y. Y. Liao; W. H. Hung; M. Hong; J. Kwo; J. P. Mannaerts

doi:10.1016/j.jcrysgro.2004.12.128

Depth-profile study of the electronic structures at Ga₂O ₃(Gd₂O₃) and Gd₂O₃-GaN interfaces by X-ray photoelectron spectroscopy

T. S. Lay, Y. Y. Liao, W. H. Hung, M. Hong, J. Kwo, J. P. Mannaerts

Department of Chemistry

Research output: Contribution to journal › Conference article › peer-review

23 Citations (Scopus)

Abstract

The depth profile of high-resolution photoelectron spectra at Ga ₂O₃(Gd₂O₃)-GaN and Gd ₂O₃-GaN interfaces grown by molecular beam epitaxy (MBE) has been obtained by using synchrotron radiation beam and low-energy Ar ⁺ sputtering. The data indicate that both of the oxide layers are highly hygroscopic with the observation of O-H bonding. The valence-band offsets (ΔEV) of ∼1.1 and 1.0 eV were also measured for the Ga ₂O₃(Gd₂O₃)-GaN and Gd ₂O₃-GaN interfaces, respectively.

Original language	English
Pages (from-to)	624-628
Number of pages	5
Journal	Journal of Crystal Growth
Volume	278
Issue number	1-4
DOIs	https://doi.org/10.1016/j.jcrysgro.2004.12.128
Publication status	Published - 2005 May 1
Event	13th International Conference on Molecular Beam Epitaxy - Duration: 2004 Aug 22 → 2004 Aug 27

Keywords

A1. Interfaces
A3. Molecular beam epitaxy
B1. Gadolinium compounds
B1. Nitrides
B2. Dielectric materials
B2. Semiconducting gallium compounds

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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10.1016/j.jcrysgro.2004.12.128

Cite this

@article{a0ed31c8a5cb458a8e01c31660bb2a2f,

title = "Depth-profile study of the electronic structures at Ga2O 3(Gd2O3) and Gd2O3-GaN interfaces by X-ray photoelectron spectroscopy",

abstract = "The depth profile of high-resolution photoelectron spectra at Ga 2O3(Gd2O3)-GaN and Gd 2O3-GaN interfaces grown by molecular beam epitaxy (MBE) has been obtained by using synchrotron radiation beam and low-energy Ar + sputtering. The data indicate that both of the oxide layers are highly hygroscopic with the observation of O-H bonding. The valence-band offsets (ΔEV) of ∼1.1 and 1.0 eV were also measured for the Ga 2O3(Gd2O3)-GaN and Gd 2O3-GaN interfaces, respectively.",

keywords = "A1. Interfaces, A3. Molecular beam epitaxy, B1. Gadolinium compounds, B1. Nitrides, B2. Dielectric materials, B2. Semiconducting gallium compounds",

author = "Lay, {T. S.} and Liao, {Y. Y.} and Hung, {W. H.} and M. Hong and J. Kwo and Mannaerts, {J. P.}",

note = "Funding Information: One of us (TSL) would like to thank the supports from the MOE Program for Promoting University Academic Excellence under Grant no. 91-E-FA08-1-4, and the National Science Council of Taiwan through funding Grants NSC-92-2215-E-110-008. Facility support at the NSRRC is gratefully acknowledged.; 13th International Conference on Molecular Beam Epitaxy ; Conference date: 22-08-2004 Through 27-08-2004",

year = "2005",

month = may,

day = "1",

doi = "10.1016/j.jcrysgro.2004.12.128",

language = "English",

volume = "278",

pages = "624--628",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier",

number = "1-4",

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TY - JOUR

T1 - Depth-profile study of the electronic structures at Ga2O 3(Gd2O3) and Gd2O3-GaN interfaces by X-ray photoelectron spectroscopy

AU - Lay, T. S.

AU - Liao, Y. Y.

AU - Hung, W. H.

AU - Hong, M.

AU - Kwo, J.

AU - Mannaerts, J. P.

N1 - Funding Information: One of us (TSL) would like to thank the supports from the MOE Program for Promoting University Academic Excellence under Grant no. 91-E-FA08-1-4, and the National Science Council of Taiwan through funding Grants NSC-92-2215-E-110-008. Facility support at the NSRRC is gratefully acknowledged.

PY - 2005/5/1

Y1 - 2005/5/1

N2 - The depth profile of high-resolution photoelectron spectra at Ga 2O3(Gd2O3)-GaN and Gd 2O3-GaN interfaces grown by molecular beam epitaxy (MBE) has been obtained by using synchrotron radiation beam and low-energy Ar + sputtering. The data indicate that both of the oxide layers are highly hygroscopic with the observation of O-H bonding. The valence-band offsets (ΔEV) of ∼1.1 and 1.0 eV were also measured for the Ga 2O3(Gd2O3)-GaN and Gd 2O3-GaN interfaces, respectively.

AB - The depth profile of high-resolution photoelectron spectra at Ga 2O3(Gd2O3)-GaN and Gd 2O3-GaN interfaces grown by molecular beam epitaxy (MBE) has been obtained by using synchrotron radiation beam and low-energy Ar + sputtering. The data indicate that both of the oxide layers are highly hygroscopic with the observation of O-H bonding. The valence-band offsets (ΔEV) of ∼1.1 and 1.0 eV were also measured for the Ga 2O3(Gd2O3)-GaN and Gd 2O3-GaN interfaces, respectively.

KW - A1. Interfaces

KW - A3. Molecular beam epitaxy

KW - B1. Gadolinium compounds

KW - B1. Nitrides

KW - B2. Dielectric materials

KW - B2. Semiconducting gallium compounds

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U2 - 10.1016/j.jcrysgro.2004.12.128

DO - 10.1016/j.jcrysgro.2004.12.128

M3 - Conference article

AN - SCOPUS:18444388307

VL - 278

SP - 624

EP - 628

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

IS - 1-4

T2 - 13th International Conference on Molecular Beam Epitaxy

Y2 - 22 August 2004 through 27 August 2004

ER -