Abstract
The depth profile of high-resolution photoelectron spectra at Ga 2O3(Gd2O3)-GaN and Gd 2O3-GaN interfaces grown by molecular beam epitaxy (MBE) has been obtained by using synchrotron radiation beam and low-energy Ar + sputtering. The data indicate that both of the oxide layers are highly hygroscopic with the observation of O-H bonding. The valence-band offsets (ΔEV) of ∼1.1 and 1.0 eV were also measured for the Ga 2O3(Gd2O3)-GaN and Gd 2O3-GaN interfaces, respectively.
Original language | English |
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Pages (from-to) | 624-628 |
Number of pages | 5 |
Journal | Journal of Crystal Growth |
Volume | 278 |
Issue number | 1-4 |
DOIs | |
Publication status | Published - 2005 May 1 |
Event | 13th International Conference on Molecular Beam Epitaxy - Duration: 2004 Aug 22 → 2004 Aug 27 |
Keywords
- A1. Interfaces
- A3. Molecular beam epitaxy
- B1. Gadolinium compounds
- B1. Nitrides
- B2. Dielectric materials
- B2. Semiconducting gallium compounds
ASJC Scopus subject areas
- Condensed Matter Physics
- Inorganic Chemistry
- Materials Chemistry