Depth-profile study of the electronic structures at Ga2O 3(Gd2O3) and Gd2O3-GaN interfaces by X-ray photoelectron spectroscopy

T. S. Lay, Y. Y. Liao, W. H. Hung, M. Hong, J. Kwo, J. P. Mannaerts

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23 Citations (Scopus)


The depth profile of high-resolution photoelectron spectra at Ga 2O3(Gd2O3)-GaN and Gd 2O3-GaN interfaces grown by molecular beam epitaxy (MBE) has been obtained by using synchrotron radiation beam and low-energy Ar + sputtering. The data indicate that both of the oxide layers are highly hygroscopic with the observation of O-H bonding. The valence-band offsets (ΔEV) of ∼1.1 and 1.0 eV were also measured for the Ga 2O3(Gd2O3)-GaN and Gd 2O3-GaN interfaces, respectively.

Original languageEnglish
Pages (from-to)624-628
Number of pages5
JournalJournal of Crystal Growth
Issue number1-4
Publication statusPublished - 2005 May 1
Event13th International Conference on Molecular Beam Epitaxy -
Duration: 2004 Aug 222004 Aug 27


  • A1. Interfaces
  • A3. Molecular beam epitaxy
  • B1. Gadolinium compounds
  • B1. Nitrides
  • B2. Dielectric materials
  • B2. Semiconducting gallium compounds

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry


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