Dependence of efficiency-droop effect on the location of high indium layer in staggered InGaN quantum wells

Y. C. Yao, M. T. Tsai, Y. J. Lee, Y. C. Chen, C. J. Wu

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Staggered quantum wells (QWs) structures are numerically studied to reduce the influence of efficiency-droop effect on the InGaN-based green light-emitting diode (LED). The location of high In-content InGaN layer in staggered QWs considerably affects the distribution of the electrostatic-field of an LED. When the high In-content InGaN layer is suitably located in the staggered QWs, the localized electrostatic-field with high intensity increases the transport efficiency of injected holes across the active region, improving the overall radiative efficiency of the LED. Most importantly, as accumulation of injected holes in the last QW is relieved, the Auger recombination process is quenched, suppressing the efficiency-droop in the LED. Theoretically, the incorporation of the staggered InGaN QWs in the green LED (λ = 530 nm) can ensure an extremely low efficiency droop of 11.3%.

Original languageEnglish
Pages (from-to)2442-2453
Number of pages12
JournalJournal of Electromagnetic Waves and Applications
Issue number17-18
Publication statusPublished - 2011 Dec 28


ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Physics and Astronomy(all)
  • Electrical and Electronic Engineering

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