Density of states of graphene in the presence of strong point defects

Bor Luen Huang*, Ming Che Chang, Chung Yu Mou

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

17 Citations (Scopus)


The density of states near zero energy in a graphene due to strong point defects with random positions are computed. Instead of focusing on density of states directly, we analyze eigenfunctions of inverse T matrix in the unitary limit. Based on numerical simulations, we find that the squared magnitudes of eigenfunctions for the inverse T matrix show random-walk behavior on defect positions. As a result, squared magnitudes of eigenfunctions have equal a priori probabilities, which further implies that the density of states is characterized by the well-known Thomas-Porter-type distribution. The numerical findings of Thomas-Porter-type distribution are further derived in the saddle-point limit of the corresponding replica field theory of inverse T matrix. Furthermore, the influences of the Thomas-Porter distribution on magnetic and transport properties of a graphene, due to its divergence near zero energy, are also examined.

Original languageEnglish
Article number155462
JournalPhysical Review B - Condensed Matter and Materials Physics
Issue number15
Publication statusPublished - 2010 Oct 29

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics


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