Density of states of graphene in the presence of strong point defects

Bor Luen Huang, Ming Che Chang, Chung Yu Mou

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

The density of states near zero energy in a graphene due to strong point defects with random positions are computed. Instead of focusing on density of states directly, we analyze eigenfunctions of inverse T matrix in the unitary limit. Based on numerical simulations, we find that the squared magnitudes of eigenfunctions for the inverse T matrix show random-walk behavior on defect positions. As a result, squared magnitudes of eigenfunctions have equal a priori probabilities, which further implies that the density of states is characterized by the well-known Thomas-Porter-type distribution. The numerical findings of Thomas-Porter-type distribution are further derived in the saddle-point limit of the corresponding replica field theory of inverse T matrix. Furthermore, the influences of the Thomas-Porter distribution on magnetic and transport properties of a graphene, due to its divergence near zero energy, are also examined.

Original languageEnglish
Article number155462
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume82
Issue number15
DOIs
Publication statusPublished - 2010 Oct 29

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Point defects
Eigenvalues and eigenfunctions
Graphene
point defects
graphene
eigenvectors
matrices
saddle points
replicas
random walk
Transport properties
Magnetic properties
divergence
transport properties
magnetic properties
Defects
energy
defects
Computer simulation

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials

Cite this

Density of states of graphene in the presence of strong point defects. / Huang, Bor Luen; Chang, Ming Che; Mou, Chung Yu.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 82, No. 15, 155462, 29.10.2010.

Research output: Contribution to journalArticle

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