Demonstration of distinct semiconducting transport characteristics of monolayer graphene functionalized via plasma activation of substrate surfaces

Po Hsiang Wang; Fu Yu Shih; Shao Yu Chen; Alvin B. Hernandez; Po Hsun Ho; Lo Yueh Chang; Chia Hao Chen; Hsiang Chih Chiu; Chun Wei Chen; Wei Hua Wang

doi:10.1016/j.carbon.2015.05.060

Demonstration of distinct semiconducting transport characteristics of monolayer graphene functionalized via plasma activation of substrate surfaces

Po Hsiang Wang
, Fu Yu Shih
, Shao Yu Chen
, Alvin B. Hernandez
, Po Hsun Ho
, Lo Yueh Chang
, Chia Hao Chen
, Hsiang Chih Chiu
, Chun Wei Chen
, Wei Hua Wang^*

^*Corresponding author for this work

Department of Physics

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

We report semiconducting behavior of monolayer graphene enabled through plasma activation of substrate surfaces. The graphene devices are fabricated by mechanical exfoliation onto pre-processed SiO₂/Si substrates. Contrary to pristine graphene, these graphene samples exhibit a transport gap as well as nonlinear transfer characteristics, a large on/off ratio of 600 at cryogenic temperatures, and an insulating-like temperature dependence. Raman spectroscopic characterization shows evidence of sp³ hybridization of C atoms in the samples of graphene on activated SiO₂/Si substrates. We analyze the hopping transport at low temperatures, and weak localization observed from magnetotransport measurements, suggesting a correlation between carrier localization and the sp³-type defects in the functionalized graphene. The present study demonstrates the functionalization of graphene using a novel substrate surface-activation method for future graphene-based applications.

Original language	English
Pages (from-to)	353-360
Number of pages	8
Journal	Carbon
Volume	93
DOIs	https://doi.org/10.1016/j.carbon.2015.05.060
Publication status	Published - 2015 Aug 8

ASJC Scopus subject areas

General Chemistry
General Materials Science

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10.1016/j.carbon.2015.05.060

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title = "Demonstration of distinct semiconducting transport characteristics of monolayer graphene functionalized via plasma activation of substrate surfaces",

abstract = "We report semiconducting behavior of monolayer graphene enabled through plasma activation of substrate surfaces. The graphene devices are fabricated by mechanical exfoliation onto pre-processed SiO2/Si substrates. Contrary to pristine graphene, these graphene samples exhibit a transport gap as well as nonlinear transfer characteristics, a large on/off ratio of 600 at cryogenic temperatures, and an insulating-like temperature dependence. Raman spectroscopic characterization shows evidence of sp3 hybridization of C atoms in the samples of graphene on activated SiO2/Si substrates. We analyze the hopping transport at low temperatures, and weak localization observed from magnetotransport measurements, suggesting a correlation between carrier localization and the sp3-type defects in the functionalized graphene. The present study demonstrates the functionalization of graphene using a novel substrate surface-activation method for future graphene-based applications.",

author = "Wang, \{Po Hsiang\} and Shih, \{Fu Yu\} and Chen, \{Shao Yu\} and Hernandez, \{Alvin B.\} and Ho, \{Po Hsun\} and Chang, \{Lo Yueh\} and Chen, \{Chia Hao\} and Chiu, \{Hsiang Chih\} and Chen, \{Chun Wei\} and Wang, \{Wei Hua\}",

year = "2015",

month = aug,

day = "8",

doi = "10.1016/j.carbon.2015.05.060",

language = "English",

volume = "93",

pages = "353--360",

journal = "Carbon",

issn = "0008-6223",

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TY - JOUR

T1 - Demonstration of distinct semiconducting transport characteristics of monolayer graphene functionalized via plasma activation of substrate surfaces

AU - Wang, Po Hsiang

AU - Shih, Fu Yu

AU - Chen, Shao Yu

AU - Hernandez, Alvin B.

AU - Ho, Po Hsun

AU - Chang, Lo Yueh

AU - Chen, Chia Hao

AU - Chiu, Hsiang Chih

AU - Chen, Chun Wei

AU - Wang, Wei Hua

PY - 2015/8/8

Y1 - 2015/8/8

N2 - We report semiconducting behavior of monolayer graphene enabled through plasma activation of substrate surfaces. The graphene devices are fabricated by mechanical exfoliation onto pre-processed SiO2/Si substrates. Contrary to pristine graphene, these graphene samples exhibit a transport gap as well as nonlinear transfer characteristics, a large on/off ratio of 600 at cryogenic temperatures, and an insulating-like temperature dependence. Raman spectroscopic characterization shows evidence of sp3 hybridization of C atoms in the samples of graphene on activated SiO2/Si substrates. We analyze the hopping transport at low temperatures, and weak localization observed from magnetotransport measurements, suggesting a correlation between carrier localization and the sp3-type defects in the functionalized graphene. The present study demonstrates the functionalization of graphene using a novel substrate surface-activation method for future graphene-based applications.

AB - We report semiconducting behavior of monolayer graphene enabled through plasma activation of substrate surfaces. The graphene devices are fabricated by mechanical exfoliation onto pre-processed SiO2/Si substrates. Contrary to pristine graphene, these graphene samples exhibit a transport gap as well as nonlinear transfer characteristics, a large on/off ratio of 600 at cryogenic temperatures, and an insulating-like temperature dependence. Raman spectroscopic characterization shows evidence of sp3 hybridization of C atoms in the samples of graphene on activated SiO2/Si substrates. We analyze the hopping transport at low temperatures, and weak localization observed from magnetotransport measurements, suggesting a correlation between carrier localization and the sp3-type defects in the functionalized graphene. The present study demonstrates the functionalization of graphene using a novel substrate surface-activation method for future graphene-based applications.

UR - https://www.scopus.com/pages/publications/84938596434

UR - https://www.scopus.com/pages/publications/84938596434#tab=citedBy

U2 - 10.1016/j.carbon.2015.05.060

DO - 10.1016/j.carbon.2015.05.060

M3 - Article

AN - SCOPUS:84938596434

SN - 0008-6223

VL - 93

SP - 353

EP - 360

JO - Carbon

JF - Carbon

ER -

Demonstration of distinct semiconducting transport characteristics of monolayer graphene functionalized via plasma activation of substrate surfaces

Abstract

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