Demonstration of distinct semiconducting transport characteristics of monolayer graphene functionalized via plasma activation of substrate surfaces

Po Hsiang Wang; Fu Yu Shih; Shao Yu Chen; Alvin B. Hernandez; Po Hsun Ho; Lo Yueh Chang; Chia Hao Chen; Hsiang Chih Chiu; Chun Wei Chen; Wei Hua Wang

doi:10.1016/j.carbon.2015.05.060

Demonstration of distinct semiconducting transport characteristics of monolayer graphene functionalized via plasma activation of substrate surfaces

Po Hsiang Wang, Fu Yu Shih, Shao Yu Chen, Alvin B. Hernandez, Po Hsun Ho, Lo Yueh Chang, Chia Hao Chen, Hsiang Chih Chiu, Chun Wei Chen, Wei Hua Wang^*

^*Corresponding author for this work

Department of Physics

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

We report semiconducting behavior of monolayer graphene enabled through plasma activation of substrate surfaces. The graphene devices are fabricated by mechanical exfoliation onto pre-processed SiO₂/Si substrates. Contrary to pristine graphene, these graphene samples exhibit a transport gap as well as nonlinear transfer characteristics, a large on/off ratio of 600 at cryogenic temperatures, and an insulating-like temperature dependence. Raman spectroscopic characterization shows evidence of sp³ hybridization of C atoms in the samples of graphene on activated SiO₂/Si substrates. We analyze the hopping transport at low temperatures, and weak localization observed from magnetotransport measurements, suggesting a correlation between carrier localization and the sp³-type defects in the functionalized graphene. The present study demonstrates the functionalization of graphene using a novel substrate surface-activation method for future graphene-based applications.

Original language	English
Pages (from-to)	353-360
Number of pages	8
Journal	Carbon
Volume	93
DOIs	https://doi.org/10.1016/j.carbon.2015.05.060
Publication status	Published - 2015 Aug 8

ASJC Scopus subject areas

General Chemistry
General Materials Science

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10.1016/j.carbon.2015.05.060

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title = "Demonstration of distinct semiconducting transport characteristics of monolayer graphene functionalized via plasma activation of substrate surfaces",

abstract = "We report semiconducting behavior of monolayer graphene enabled through plasma activation of substrate surfaces. The graphene devices are fabricated by mechanical exfoliation onto pre-processed SiO2/Si substrates. Contrary to pristine graphene, these graphene samples exhibit a transport gap as well as nonlinear transfer characteristics, a large on/off ratio of 600 at cryogenic temperatures, and an insulating-like temperature dependence. Raman spectroscopic characterization shows evidence of sp3 hybridization of C atoms in the samples of graphene on activated SiO2/Si substrates. We analyze the hopping transport at low temperatures, and weak localization observed from magnetotransport measurements, suggesting a correlation between carrier localization and the sp3-type defects in the functionalized graphene. The present study demonstrates the functionalization of graphene using a novel substrate surface-activation method for future graphene-based applications.",

author = "Wang, {Po Hsiang} and Shih, {Fu Yu} and Chen, {Shao Yu} and Hernandez, {Alvin B.} and Ho, {Po Hsun} and Chang, {Lo Yueh} and Chen, {Chia Hao} and Chiu, {Hsiang Chih} and Chen, {Chun Wei} and Wang, {Wei Hua}",

year = "2015",

month = aug,

day = "8",

doi = "10.1016/j.carbon.2015.05.060",

language = "English",

volume = "93",

pages = "353--360",

journal = "Carbon",

issn = "0008-6223",

publisher = "Elsevier Limited",

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TY - JOUR

T1 - Demonstration of distinct semiconducting transport characteristics of monolayer graphene functionalized via plasma activation of substrate surfaces

AU - Wang, Po Hsiang

AU - Shih, Fu Yu

AU - Chen, Shao Yu

AU - Hernandez, Alvin B.

AU - Ho, Po Hsun

AU - Chang, Lo Yueh

AU - Chen, Chia Hao

AU - Chiu, Hsiang Chih

AU - Chen, Chun Wei

AU - Wang, Wei Hua

PY - 2015/8/8

Y1 - 2015/8/8

N2 - We report semiconducting behavior of monolayer graphene enabled through plasma activation of substrate surfaces. The graphene devices are fabricated by mechanical exfoliation onto pre-processed SiO2/Si substrates. Contrary to pristine graphene, these graphene samples exhibit a transport gap as well as nonlinear transfer characteristics, a large on/off ratio of 600 at cryogenic temperatures, and an insulating-like temperature dependence. Raman spectroscopic characterization shows evidence of sp3 hybridization of C atoms in the samples of graphene on activated SiO2/Si substrates. We analyze the hopping transport at low temperatures, and weak localization observed from magnetotransport measurements, suggesting a correlation between carrier localization and the sp3-type defects in the functionalized graphene. The present study demonstrates the functionalization of graphene using a novel substrate surface-activation method for future graphene-based applications.

AB - We report semiconducting behavior of monolayer graphene enabled through plasma activation of substrate surfaces. The graphene devices are fabricated by mechanical exfoliation onto pre-processed SiO2/Si substrates. Contrary to pristine graphene, these graphene samples exhibit a transport gap as well as nonlinear transfer characteristics, a large on/off ratio of 600 at cryogenic temperatures, and an insulating-like temperature dependence. Raman spectroscopic characterization shows evidence of sp3 hybridization of C atoms in the samples of graphene on activated SiO2/Si substrates. We analyze the hopping transport at low temperatures, and weak localization observed from magnetotransport measurements, suggesting a correlation between carrier localization and the sp3-type defects in the functionalized graphene. The present study demonstrates the functionalization of graphene using a novel substrate surface-activation method for future graphene-based applications.

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DO - 10.1016/j.carbon.2015.05.060

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SN - 0008-6223

VL - 93

SP - 353

EP - 360

JO - Carbon

JF - Carbon

ER -

Demonstration of distinct semiconducting transport characteristics of monolayer graphene functionalized via plasma activation of substrate surfaces

Abstract

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