Defect structure of highly Zn-doped LiNb O3 single crystal revealed by extended x-ray absorption spectra

P. C. Tsai, M. L. Sun, Chi-Ta Chia, H. F. Lu, S. H. Lin, M. L. Hu, J. F. Lee

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To determine the defect structure of ZnO-doped LiNb O3 single crystals with high doping concentrations, we obtain the measurements using the extended x-ray absorption fine structure (EXAFS) at room temperature. It indicates Zn atom is directly substituted on the Li site of the LiNb O3 crystal after Zn doping. EXAFS simulation by way of analyzing the scattering amplitudes also shows that the Zn atom does not substitute the Nb site at highly Zn-doped LiNb O3. Finally, we confirm that VNb 5-, a strong charged vacancy, should be considered as an important factors in influencing the physical properties of LiNb O3 beyond 7.5 mol % Zn-doped doping concentration.

Original languageEnglish
Article number161902
JournalApplied Physics Letters
Issue number16
Publication statusPublished - 2008 May 1


ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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