Deep insights into Interface Effects to achieve Low-voltage Operation (<1.2V), Low Process Temperature, and First-Principle Calculation

Y. T. Tang; T. M. Wu; C. L. Fan; Y. M. Lai; K. Y. Hsiang; C. Y. Liao; S. H. Chang; T. Y. Yu; P. Su; M. T. Chang; B. H. Huang; C. Hu; S. J. Chang; M. F. Chang; M. H. Lee

doi:10.1109/RFIT52905.2021.9565279

Deep insights into Interface Effects to achieve Low-voltage Operation (<1.2V), Low Process Temperature, and First-Principle Calculation

Y. T. Tang
, T. M. Wu
, C. L. Fan
, Y. M. Lai
, K. Y. Hsiang
, C. Y. Liao
, S. H. Chang
, T. Y. Yu
, P. Su
, M. T. Chang
, B. H. Huang
, C. Hu
, S. J. Chang
, M. F. Chang
, M. H. Lee

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Citations (Scopus)

Abstract

To address the strategy of interface effects to achieve low-voltage operation in ferroelectric devices, this work presents a systematical study on Hf0.5Zr0.5O2 ferroelectric(FE) capacitors. Firstly, by detail electrical characterization of P-V curves under varied electrodes and ambient gas, two factors governed ferroelectric switching can be well distinguished. Then by combining the kinetical pulse measurements and first-principle calculation, it is found that, 1) the intrinsic dead-layer effect exits in nanocapacitors; 2) the ferroelectric domain switching speed and coherency can be boosted via lower thermal budget O2 treatment. Finally, a material with coherency and ultra-low access voltage as design guideline for sub-3nm technology eNVM is provided.

Original language	English
Title of host publication	2021 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2021
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781665433914
DOIs	https://doi.org/10.1109/RFIT52905.2021.9565279
Publication status	Published - 2021 Aug 25
Externally published	Yes
Event	2021 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2021 - Hualien, Taiwan Duration: 2021 Aug 25 → 2021 Aug 27

Publication series

Name	2021 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2021

Conference

Conference	2021 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2021
Country/Territory	Taiwan
City	Hualien
Period	2021/08/25 → 2021/08/27

Keywords

Domain coherent switching
NLS
interfacial dead layer

ASJC Scopus subject areas

Computer Networks and Communications
Electrical and Electronic Engineering
Instrumentation

Access to Document

10.1109/RFIT52905.2021.9565279

Cite this

Tang, Y. T., Wu, T. M., Fan, C. L., Lai, Y. M., Hsiang, K. Y., Liao, C. Y., Chang, S. H., Yu, T. Y., Su, P., Chang, M. T., Huang, B. H., Hu, C., Chang, S. J., Chang, M. F., & Lee, M. H. (2021). Deep insights into Interface Effects to achieve Low-voltage Operation (<1.2V), Low Process Temperature, and First-Principle Calculation. In 2021 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2021 (2021 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2021). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/RFIT52905.2021.9565279

Deep insights into Interface Effects to achieve Low-voltage Operation (<1.2V), Low Process Temperature, and First-Principle Calculation. / Tang, Y. T.; Wu, T. M.; Fan, C. L. et al.
2021 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2021. Institute of Electrical and Electronics Engineers Inc., 2021. (2021 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2021).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Tang, YT, Wu, TM, Fan, CL, Lai, YM, Hsiang, KY, Liao, CY, Chang, SH, Yu, TY, Su, P, Chang, MT, Huang, BH, Hu, C, Chang, SJ, Chang, MF & Lee, MH 2021, Deep insights into Interface Effects to achieve Low-voltage Operation (<1.2V), Low Process Temperature, and First-Principle Calculation. in 2021 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2021. 2021 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2021, Institute of Electrical and Electronics Engineers Inc., 2021 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2021, Hualien, Taiwan, 2021/08/25. https://doi.org/10.1109/RFIT52905.2021.9565279

Tang YT, Wu TM, Fan CL, Lai YM, Hsiang KY, Liao CY et al. Deep insights into Interface Effects to achieve Low-voltage Operation (<1.2V), Low Process Temperature, and First-Principle Calculation. In 2021 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2021. Institute of Electrical and Electronics Engineers Inc. 2021. (2021 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2021). doi: 10.1109/RFIT52905.2021.9565279

Tang, Y. T. ; Wu, T. M. ; Fan, C. L. et al. / Deep insights into Interface Effects to achieve Low-voltage Operation (<1.2V), Low Process Temperature, and First-Principle Calculation. 2021 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2021. Institute of Electrical and Electronics Engineers Inc., 2021. (2021 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2021).

@inproceedings{4294bc1f981147ed82be2a9ceb5cb556,

title = "Deep insights into Interface Effects to achieve Low-voltage Operation (<1.2V), Low Process Temperature, and First-Principle Calculation",

abstract = "To address the strategy of interface effects to achieve low-voltage operation in ferroelectric devices, this work presents a systematical study on Hf0.5Zr0.5O2 ferroelectric(FE) capacitors. Firstly, by detail electrical characterization of P-V curves under varied electrodes and ambient gas, two factors governed ferroelectric switching can be well distinguished. Then by combining the kinetical pulse measurements and first-principle calculation, it is found that, 1) the intrinsic dead-layer effect exits in nanocapacitors; 2) the ferroelectric domain switching speed and coherency can be boosted via lower thermal budget O2 treatment. Finally, a material with coherency and ultra-low access voltage as design guideline for sub-3nm technology eNVM is provided.",

keywords = "Domain coherent switching, NLS, interfacial dead layer",

author = "Tang, \{Y. T.\} and Wu, \{T. M.\} and Fan, \{C. L.\} and Lai, \{Y. M.\} and Hsiang, \{K. Y.\} and Liao, \{C. Y.\} and Chang, \{S. H.\} and Yu, \{T. Y.\} and P. Su and Chang, \{M. T.\} and Huang, \{B. H.\} and C. Hu and Chang, \{S. J.\} and Chang, \{M. F.\} and Lee, \{M. H.\}",

note = "Publisher Copyright: {\textcopyright} 2021 IEEE.; 2021 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2021 ; Conference date: 25-08-2021 Through 27-08-2021",

year = "2021",

month = aug,

day = "25",

doi = "10.1109/RFIT52905.2021.9565279",

language = "English",

series = "2021 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2021",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "2021 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2021",

}

TY - GEN

T1 - Deep insights into Interface Effects to achieve Low-voltage Operation (<1.2V), Low Process Temperature, and First-Principle Calculation

AU - Tang, Y. T.

AU - Wu, T. M.

AU - Fan, C. L.

AU - Lai, Y. M.

AU - Hsiang, K. Y.

AU - Liao, C. Y.

AU - Chang, S. H.

AU - Yu, T. Y.

AU - Su, P.

AU - Chang, M. T.

AU - Huang, B. H.

AU - Hu, C.

AU - Chang, S. J.

AU - Chang, M. F.

AU - Lee, M. H.

PY - 2021/8/25

Y1 - 2021/8/25

N2 - To address the strategy of interface effects to achieve low-voltage operation in ferroelectric devices, this work presents a systematical study on Hf0.5Zr0.5O2 ferroelectric(FE) capacitors. Firstly, by detail electrical characterization of P-V curves under varied electrodes and ambient gas, two factors governed ferroelectric switching can be well distinguished. Then by combining the kinetical pulse measurements and first-principle calculation, it is found that, 1) the intrinsic dead-layer effect exits in nanocapacitors; 2) the ferroelectric domain switching speed and coherency can be boosted via lower thermal budget O2 treatment. Finally, a material with coherency and ultra-low access voltage as design guideline for sub-3nm technology eNVM is provided.

AB - To address the strategy of interface effects to achieve low-voltage operation in ferroelectric devices, this work presents a systematical study on Hf0.5Zr0.5O2 ferroelectric(FE) capacitors. Firstly, by detail electrical characterization of P-V curves under varied electrodes and ambient gas, two factors governed ferroelectric switching can be well distinguished. Then by combining the kinetical pulse measurements and first-principle calculation, it is found that, 1) the intrinsic dead-layer effect exits in nanocapacitors; 2) the ferroelectric domain switching speed and coherency can be boosted via lower thermal budget O2 treatment. Finally, a material with coherency and ultra-low access voltage as design guideline for sub-3nm technology eNVM is provided.

KW - Domain coherent switching

KW - NLS

KW - interfacial dead layer

UR - https://www.scopus.com/pages/publications/85118132399

UR - https://www.scopus.com/pages/publications/85118132399#tab=citedBy

U2 - 10.1109/RFIT52905.2021.9565279

DO - 10.1109/RFIT52905.2021.9565279

M3 - Conference contribution

AN - SCOPUS:85118132399

T3 - 2021 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2021

BT - 2021 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2021

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2021 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2021

Y2 - 25 August 2021 through 27 August 2021

ER -

Deep insights into Interface Effects to achieve Low-voltage Operation (<1.2V), Low Process Temperature, and First-Principle Calculation

Abstract

Publication series

Conference

Keywords

ASJC Scopus subject areas

Access to Document

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