Damage-reduced process revealed by photoluminescence in photoelectrochemical etching GaN

J. M. Hwang, J. T. Hsieh, H. L. Hwang, Wei-Hsiu Hung

Research output: Contribution to journalConference article

Abstract

Photoelectrochemical (PEC) etching technique has been proven to be an effective method to etch GaN. Despite its success, investigations on etching-induced damage are still scare. In this work, the damage induced by PEC etching of GaN in KOH electrolyte was studied. Photoluminescence (PL) spectroscopy was used to explore the origin of etching-induced damaged layer. From the variable temperature PL measurements, the origin of etching-induced damage was attributed to be the defect complex of VGa-ON (gallium vacancy bonds to oxygeon on nitrogen antisite). With determination of the defect origin, the electronic transition in the etch damage-related yellow luminescence (YL) band was suggested to be deep donor-like state to shallow-acceptor transition. In addition, a post-treatment method with boiled KOH chemical etching was developed to remove the thin damaged layer. In this method, crystallographic etching characteristics of boiled KOH was observed to assist in the formation of smooth sidewall facets. As revealed by the reduction of yellow luminescence, we propose this novel technique as a near damage-free etching method.

Original languageEnglish
JournalMaterials Research Society Symposium - Proceedings
Volume595
Publication statusPublished - 2000 Jan 1
EventThe 1999 MRS Fall Meeting - Symposium W 'GaN and Related Alloys' - Boston, MA, USA
Duration: 1999 Nov 281999 Dec 3

Fingerprint

Etching
Photoluminescence
etching
damage
photoluminescence
Luminescence
luminescence
Defects
Gallium
Photoluminescence spectroscopy
defects
Electron transitions
Electrolytes
Vacancies
gallium
flat surfaces
Nitrogen
electrolytes
nitrogen
electronics

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Damage-reduced process revealed by photoluminescence in photoelectrochemical etching GaN. / Hwang, J. M.; Hsieh, J. T.; Hwang, H. L.; Hung, Wei-Hsiu.

In: Materials Research Society Symposium - Proceedings, Vol. 595, 01.01.2000.

Research output: Contribution to journalConference article

@article{9a74b2792dc24af1b801e8bddbd85e95,
title = "Damage-reduced process revealed by photoluminescence in photoelectrochemical etching GaN",
abstract = "Photoelectrochemical (PEC) etching technique has been proven to be an effective method to etch GaN. Despite its success, investigations on etching-induced damage are still scare. In this work, the damage induced by PEC etching of GaN in KOH electrolyte was studied. Photoluminescence (PL) spectroscopy was used to explore the origin of etching-induced damaged layer. From the variable temperature PL measurements, the origin of etching-induced damage was attributed to be the defect complex of VGa-ON (gallium vacancy bonds to oxygeon on nitrogen antisite). With determination of the defect origin, the electronic transition in the etch damage-related yellow luminescence (YL) band was suggested to be deep donor-like state to shallow-acceptor transition. In addition, a post-treatment method with boiled KOH chemical etching was developed to remove the thin damaged layer. In this method, crystallographic etching characteristics of boiled KOH was observed to assist in the formation of smooth sidewall facets. As revealed by the reduction of yellow luminescence, we propose this novel technique as a near damage-free etching method.",
author = "Hwang, {J. M.} and Hsieh, {J. T.} and Hwang, {H. L.} and Wei-Hsiu Hung",
year = "2000",
month = "1",
day = "1",
language = "English",
volume = "595",
journal = "Materials Research Society Symposium - Proceedings",
issn = "0272-9172",
publisher = "Materials Research Society",

}

TY - JOUR

T1 - Damage-reduced process revealed by photoluminescence in photoelectrochemical etching GaN

AU - Hwang, J. M.

AU - Hsieh, J. T.

AU - Hwang, H. L.

AU - Hung, Wei-Hsiu

PY - 2000/1/1

Y1 - 2000/1/1

N2 - Photoelectrochemical (PEC) etching technique has been proven to be an effective method to etch GaN. Despite its success, investigations on etching-induced damage are still scare. In this work, the damage induced by PEC etching of GaN in KOH electrolyte was studied. Photoluminescence (PL) spectroscopy was used to explore the origin of etching-induced damaged layer. From the variable temperature PL measurements, the origin of etching-induced damage was attributed to be the defect complex of VGa-ON (gallium vacancy bonds to oxygeon on nitrogen antisite). With determination of the defect origin, the electronic transition in the etch damage-related yellow luminescence (YL) band was suggested to be deep donor-like state to shallow-acceptor transition. In addition, a post-treatment method with boiled KOH chemical etching was developed to remove the thin damaged layer. In this method, crystallographic etching characteristics of boiled KOH was observed to assist in the formation of smooth sidewall facets. As revealed by the reduction of yellow luminescence, we propose this novel technique as a near damage-free etching method.

AB - Photoelectrochemical (PEC) etching technique has been proven to be an effective method to etch GaN. Despite its success, investigations on etching-induced damage are still scare. In this work, the damage induced by PEC etching of GaN in KOH electrolyte was studied. Photoluminescence (PL) spectroscopy was used to explore the origin of etching-induced damaged layer. From the variable temperature PL measurements, the origin of etching-induced damage was attributed to be the defect complex of VGa-ON (gallium vacancy bonds to oxygeon on nitrogen antisite). With determination of the defect origin, the electronic transition in the etch damage-related yellow luminescence (YL) band was suggested to be deep donor-like state to shallow-acceptor transition. In addition, a post-treatment method with boiled KOH chemical etching was developed to remove the thin damaged layer. In this method, crystallographic etching characteristics of boiled KOH was observed to assist in the formation of smooth sidewall facets. As revealed by the reduction of yellow luminescence, we propose this novel technique as a near damage-free etching method.

UR - http://www.scopus.com/inward/record.url?scp=0033704918&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0033704918&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0033704918

VL - 595

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

SN - 0272-9172

ER -