TY - JOUR
T1 - Damage-free photo-assisted cryogenic etching of GaN as evidenced by reduction of yellow luminescence
AU - Hsieh, J. T.
AU - Hwang, J. M.
AU - Hwang, H. L.
AU - Hung, W. H.
PY - 1999
Y1 - 1999
N2 - Damage-free etching of GaN by Cl2, assisted by an ArF (193 nm) excimer laser, is demonstrated. At low temperatures, photo-assisted etching can provide a better etch rate and largely improve the surface morphology and quality. AFM results show that the etched GaN surface is obtained with a root-mean-square roughness of 1.7 nm. As compared with the photoluminescence spectra of photoelectrochemical wet etched GaN, the photo-assisted cryogenic etching is proved to be a damage-free dry etching technique.
AB - Damage-free etching of GaN by Cl2, assisted by an ArF (193 nm) excimer laser, is demonstrated. At low temperatures, photo-assisted etching can provide a better etch rate and largely improve the surface morphology and quality. AFM results show that the etched GaN surface is obtained with a root-mean-square roughness of 1.7 nm. As compared with the photoluminescence spectra of photoelectrochemical wet etched GaN, the photo-assisted cryogenic etching is proved to be a damage-free dry etching technique.
UR - http://www.scopus.com/inward/record.url?scp=3442889165&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=3442889165&partnerID=8YFLogxK
U2 - 10.1557/s1092578300003598
DO - 10.1557/s1092578300003598
M3 - Article
AN - SCOPUS:3442889165
SN - 1092-5783
VL - 4
SP - 6d
JO - MRS Internet Journal of Nitride Semiconductor Research
JF - MRS Internet Journal of Nitride Semiconductor Research
IS - SUPPL. 1
ER -