Damage-free etching of GaN by Cl2, assisted by an ArF (193 nm) excimer laser, is demonstrated. At low temperatures, photo-assisted etching can provide a better etch rate and largely improve the surface morphology and quality. AFM results show that the etched GaN surface is obtained with a root-mean-square roughness of 1.7 nm. As compared with the photoluminescence spectra of photoelectrochemical wet etched GaN, the photo-assisted cryogenic etching is proved to be a damage-free dry etching technique.
|Journal||MRS Internet Journal of Nitride Semiconductor Research|
|Issue number||SUPPL. 1|
|Publication status||Published - 1999 Dec 1|
ASJC Scopus subject areas
- Materials Science(all)