Abstract
Damage-free etching of GaN by Cl2, assisted by an ArF (193 nm) excimer laser, is demonstrated. At low temperatures, photo-assisted etching can provide a better etch rate and largely improve the surface morphology and quality. AFM results show that the etched GaN surface is obtained with a root-mean-square roughness of 1.7 nm. As compared with the photoluminescence spectra of photoelectrochemical wet etched GaN, the photo-assisted cryogenic etching is proved to be a damage-free dry etching technique.
| Original language | English |
|---|---|
| Journal | MRS Internet Journal of Nitride Semiconductor Research |
| Volume | 4 |
| Issue number | SUPPL. 1 |
| Publication status | Published - 1999 Dec 1 |
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ASJC Scopus subject areas
- Materials Science(all)
Cite this
Hsieh, J. T., Hwang, J. M., Hwang, H. L., & Hung, W. H. (1999). Damage-free photo-assisted cryogenic etching of GaN as evidenced by reduction of yellow luminescence. MRS Internet Journal of Nitride Semiconductor Research, 4(SUPPL. 1).