Damage-free photo-assisted cryogenic etching of GaN as evidenced by reduction of yellow luminescence

J. T. Hsieh, J. M. Hwang, H. L. Hwang, W. H. Hung

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Damage-free etching of GaN by Cl2, assisted by an ArF (193 nm) excimer laser, is demonstrated. At low temperatures, photo-assisted etching can provide a better etch rate and largely improve the surface morphology and quality. AFM results show that the etched GaN surface is obtained with a root-mean-square roughness of 1.7 nm. As compared with the photoluminescence spectra of photoelectrochemical wet etched GaN, the photo-assisted cryogenic etching is proved to be a damage-free dry etching technique.

Original languageEnglish
JournalMRS Internet Journal of Nitride Semiconductor Research
Issue numberSUPPL. 1
Publication statusPublished - 1999 Dec 1


ASJC Scopus subject areas

  • Materials Science(all)

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