Damage-free photo-assisted cryogenic etching of GaN as evidenced by reduction of yellow luminescence

J. T. Hsieh; J. M. Hwang; H. L. Hwang; W. H. Hung

doi:10.1557/s1092578300003598

Damage-free photo-assisted cryogenic etching of GaN as evidenced by reduction of yellow luminescence

J. T. Hsieh, J. M. Hwang, H. L. Hwang, W. H. Hung

Department of Chemistry

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

Damage-free etching of GaN by Cl₂, assisted by an ArF (193 nm) excimer laser, is demonstrated. At low temperatures, photo-assisted etching can provide a better etch rate and largely improve the surface morphology and quality. AFM results show that the etched GaN surface is obtained with a root-mean-square roughness of 1.7 nm. As compared with the photoluminescence spectra of photoelectrochemical wet etched GaN, the photo-assisted cryogenic etching is proved to be a damage-free dry etching technique.

Original language	English
Pages (from-to)	6d
Journal	MRS Internet Journal of Nitride Semiconductor Research
Volume	4
Issue number	SUPPL. 1
DOIs	https://doi.org/10.1557/s1092578300003598
Publication status	Published - 1999

ASJC Scopus subject areas

Materials Science(all)

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abstract = "Damage-free etching of GaN by Cl2, assisted by an ArF (193 nm) excimer laser, is demonstrated. At low temperatures, photo-assisted etching can provide a better etch rate and largely improve the surface morphology and quality. AFM results show that the etched GaN surface is obtained with a root-mean-square roughness of 1.7 nm. As compared with the photoluminescence spectra of photoelectrochemical wet etched GaN, the photo-assisted cryogenic etching is proved to be a damage-free dry etching technique.",

author = "Hsieh, {J. T.} and Hwang, {J. M.} and Hwang, {H. L.} and Hung, {W. H.}",

year = "1999",

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AU - Hsieh, J. T.

AU - Hwang, J. M.

AU - Hwang, H. L.

AU - Hung, W. H.

PY - 1999

Y1 - 1999

N2 - Damage-free etching of GaN by Cl2, assisted by an ArF (193 nm) excimer laser, is demonstrated. At low temperatures, photo-assisted etching can provide a better etch rate and largely improve the surface morphology and quality. AFM results show that the etched GaN surface is obtained with a root-mean-square roughness of 1.7 nm. As compared with the photoluminescence spectra of photoelectrochemical wet etched GaN, the photo-assisted cryogenic etching is proved to be a damage-free dry etching technique.

AB - Damage-free etching of GaN by Cl2, assisted by an ArF (193 nm) excimer laser, is demonstrated. At low temperatures, photo-assisted etching can provide a better etch rate and largely improve the surface morphology and quality. AFM results show that the etched GaN surface is obtained with a root-mean-square roughness of 1.7 nm. As compared with the photoluminescence spectra of photoelectrochemical wet etched GaN, the photo-assisted cryogenic etching is proved to be a damage-free dry etching technique.

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