@inproceedings{68a7531fabfb48cf870c1679cbb1bfc5,
title = "Current uniformity improvement in flexible resistive memory",
abstract = "High uniform current distribution, good endurance, and low 28 μW switching power are successfully achieved in Ni/GeOx/TiO y/TaN resistive random access memory devices on flexible polyimide substrate. The good performances are attributed to the nitrogen-rich TaN to increase the oxidation resistance and decrease the TaON and oxygen vacancies formation from x-ray photoelectron spectroscopy measurements, where such oxygen vacancies are related to current conduction at high resistance state. The present results demonstrate that the device with nitrogen-rich TaN electrode has a strong potential for future low-cost high-performance flexible memory application.",
keywords = "flexible, nitrogen-rich TaN, resistive memory",
author = "Zheng, {Zhi Wei} and Cheng, {Chun Hu} and Chou, {Kun I.} and Ming Liu and Albert Chin",
year = "2013",
doi = "10.1109/EDSSC.2013.6628193",
language = "English",
isbn = "9781467325233",
series = "2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013",
booktitle = "2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013",
note = "2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013 ; Conference date: 03-06-2013 Through 05-06-2013",
}