Current uniformity improvement in flexible resistive memory

Zhi Wei Zheng, Chun Hu Cheng, Kun I. Chou, Ming Liu, Albert Chin

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

High uniform current distribution, good endurance, and low 28 μW switching power are successfully achieved in Ni/GeOx/TiO y/TaN resistive random access memory devices on flexible polyimide substrate. The good performances are attributed to the nitrogen-rich TaN to increase the oxidation resistance and decrease the TaON and oxygen vacancies formation from x-ray photoelectron spectroscopy measurements, where such oxygen vacancies are related to current conduction at high resistance state. The present results demonstrate that the device with nitrogen-rich TaN electrode has a strong potential for future low-cost high-performance flexible memory application.

Original languageEnglish
Title of host publication2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013
DOIs
Publication statusPublished - 2013
Event2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013 - Hong Kong, Hong Kong
Duration: 2013 Jun 32013 Jun 5

Publication series

Name2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013

Other

Other2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013
CountryHong Kong
CityHong Kong
Period2013/06/032013/06/05

Keywords

  • flexible
  • nitrogen-rich TaN
  • resistive memory

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

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