Current uniformity improvement in flexible resistive memory

Zhi Wei Zheng, Chun Hu Cheng, Kun I. Chou, Ming Liu, Albert Chin

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

High uniform current distribution, good endurance, and low 28 μW switching power are successfully achieved in Ni/GeOx/TiO y/TaN resistive random access memory devices on flexible polyimide substrate. The good performances are attributed to the nitrogen-rich TaN to increase the oxidation resistance and decrease the TaON and oxygen vacancies formation from x-ray photoelectron spectroscopy measurements, where such oxygen vacancies are related to current conduction at high resistance state. The present results demonstrate that the device with nitrogen-rich TaN electrode has a strong potential for future low-cost high-performance flexible memory application.

Original languageEnglish
Title of host publication2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013
DOIs
Publication statusPublished - 2013 Dec 23
Event2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013 - Hong Kong, Hong Kong
Duration: 2013 Jun 32013 Jun 5

Publication series

Name2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013

Other

Other2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013
CountryHong Kong
CityHong Kong
Period13/6/313/6/5

Fingerprint

Oxygen vacancies
Nitrogen
Data storage equipment
Oxidation resistance
Photoelectron spectroscopy
Polyimides
Durability
X rays
Electrodes
Substrates
Costs

Keywords

  • flexible
  • nitrogen-rich TaN
  • resistive memory

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

Cite this

Zheng, Z. W., Cheng, C. H., Chou, K. I., Liu, M., & Chin, A. (2013). Current uniformity improvement in flexible resistive memory. In 2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013 [6628193] (2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013). https://doi.org/10.1109/EDSSC.2013.6628193

Current uniformity improvement in flexible resistive memory. / Zheng, Zhi Wei; Cheng, Chun Hu; Chou, Kun I.; Liu, Ming; Chin, Albert.

2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013. 2013. 6628193 (2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Zheng, ZW, Cheng, CH, Chou, KI, Liu, M & Chin, A 2013, Current uniformity improvement in flexible resistive memory. in 2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013., 6628193, 2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013, 2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013, Hong Kong, Hong Kong, 13/6/3. https://doi.org/10.1109/EDSSC.2013.6628193
Zheng ZW, Cheng CH, Chou KI, Liu M, Chin A. Current uniformity improvement in flexible resistive memory. In 2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013. 2013. 6628193. (2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013). https://doi.org/10.1109/EDSSC.2013.6628193
Zheng, Zhi Wei ; Cheng, Chun Hu ; Chou, Kun I. ; Liu, Ming ; Chin, Albert. / Current uniformity improvement in flexible resistive memory. 2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013. 2013. (2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013).
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