Current enhancement of green transistors compared with conventional tunnel field-effect transistors

Min Hung Lee, Jhe Cyun Lin, Cheng Ying Kao, Chih Wei Chen

Research output: Contribution to journalArticle

3 Citations (Scopus)


P-type tunneling-based high-driving-current green field-effect transistors (p-gFETs) with dopant segregation (DS) on bulk Si were successfully fabricated and developed. gFETs with the vertical band-to-band tunneling (BTBT) mechanism have a valid benefit for 25 ON current enhancement compared with tunneling field-effect transistors (TFETs) without sacrificing leakage current and subthreshold swing for CMOS scaling in future-generation transistors. Ni DS enhanced the amount of n dopant in the source/drain region and produced a steep junction profile, which improved the BTBT mechanism. The promising gFET with silicon-on-insulator-free (SOI-free) gFET can be compatible with current processes and solve the issues of cost and thermal dissipation.

Original languageEnglish
Article number04CC27
JournalJapanese Journal of Applied Physics
Issue number4 PART 2
Publication statusPublished - 2013 Apr 1


ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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