Current enhancement of green transistors compared with conventional tunnel field-effect transistors

Min Hung Lee, Jhe Cyun Lin, Cheng Ying Kao, Chih Wei Chen

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

P-type tunneling-based high-driving-current green field-effect transistors (p-gFETs) with dopant segregation (DS) on bulk Si were successfully fabricated and developed. gFETs with the vertical band-to-band tunneling (BTBT) mechanism have a valid benefit for 25 ON current enhancement compared with tunneling field-effect transistors (TFETs) without sacrificing leakage current and subthreshold swing for CMOS scaling in future-generation transistors. Ni DS enhanced the amount of n dopant in the source/drain region and produced a steep junction profile, which improved the BTBT mechanism. The promising gFET with silicon-on-insulator-free (SOI-free) gFET can be compatible with current processes and solve the issues of cost and thermal dissipation.

Original languageEnglish
Article number04CC27
JournalJapanese Journal of Applied Physics
Volume52
Issue number4 PART 2
DOIs
Publication statusPublished - 2013 Apr 1

Fingerprint

Field effect transistors
tunnels
Tunnels
Transistors
transistors
field effect transistors
Doping (additives)
augmentation
Leakage currents
high current
Silicon
CMOS
leakage
dissipation
insulators
costs
scaling
Costs
silicon
profiles

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Current enhancement of green transistors compared with conventional tunnel field-effect transistors. / Lee, Min Hung; Lin, Jhe Cyun; Kao, Cheng Ying; Chen, Chih Wei.

In: Japanese Journal of Applied Physics, Vol. 52, No. 4 PART 2, 04CC27, 01.04.2013.

Research output: Contribution to journalArticle

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