Current conduction of 0.72 nm equivalent-oxide-thickness LaO/HfO 2 stacked gate dielectrics

Chuan Hsi Liu; Hung Wen Chen; Shung Yuan Chen; Heng Sheng Huang; Li Wei Cheng

doi:10.1063/1.3170235

Current conduction of 0.72 nm equivalent-oxide-thickness LaO/HfO ₂ stacked gate dielectrics

Chuan Hsi Liu^*, Hung Wen Chen, Shung Yuan Chen, Heng Sheng Huang, Li Wei Cheng

^*Corresponding author for this work

Department of Mechatronic Engineering

Research output: Contribution to journal › Article › peer-review

34 Citations (Scopus)

Abstract

Metal-oxide-semiconductor capacitors (MOSCs) incorporating atomic layer deposited (ALD) LaO/HfO₂ stacked gate dielectrics were fabricated, where the equivalent oxide thickness (EOT) of the high- k dielectrics is only 0.72 nm and the gate leakage (J_g) is as low as 6.8× 10-2 A/ cm². Based on the analysis of the temperature dependence of the gate leakage current from 300 to 500 K, the main current conduction is found to be Schottky emission or Poole-Frankel emission. Moreover, the barrier height (Φ_B) at TaC and HfLaO interface is estimated to be about 1.21 eV, and the trap energy level (Φ_t) is about 0.51 eV.

Original language	English
Article number	012103
Journal	Applied Physics Letters
Volume	95
Issue number	1
DOIs	https://doi.org/10.1063/1.3170235
Publication status	Published - 2009

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Current conduction of 0.72 nm equivalent-oxide-thickness LaO/HfO 2 stacked gate dielectrics",

abstract = "Metal-oxide-semiconductor capacitors (MOSCs) incorporating atomic layer deposited (ALD) LaO/HfO2 stacked gate dielectrics were fabricated, where the equivalent oxide thickness (EOT) of the high- k dielectrics is only 0.72 nm and the gate leakage (Jg) is as low as 6.8× 10-2 A/ cm2. Based on the analysis of the temperature dependence of the gate leakage current from 300 to 500 K, the main current conduction is found to be Schottky emission or Poole-Frankel emission. Moreover, the barrier height (ΦB) at TaC and HfLaO interface is estimated to be about 1.21 eV, and the trap energy level (Φt) is about 0.51 eV.",

author = "Liu, {Chuan Hsi} and Chen, {Hung Wen} and Chen, {Shung Yuan} and Huang, {Heng Sheng} and Cheng, {Li Wei}",

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T1 - Current conduction of 0.72 nm equivalent-oxide-thickness LaO/HfO 2 stacked gate dielectrics

AU - Liu, Chuan Hsi

AU - Chen, Hung Wen

AU - Chen, Shung Yuan

AU - Huang, Heng Sheng

AU - Cheng, Li Wei

PY - 2009

Y1 - 2009

N2 - Metal-oxide-semiconductor capacitors (MOSCs) incorporating atomic layer deposited (ALD) LaO/HfO2 stacked gate dielectrics were fabricated, where the equivalent oxide thickness (EOT) of the high- k dielectrics is only 0.72 nm and the gate leakage (Jg) is as low as 6.8× 10-2 A/ cm2. Based on the analysis of the temperature dependence of the gate leakage current from 300 to 500 K, the main current conduction is found to be Schottky emission or Poole-Frankel emission. Moreover, the barrier height (ΦB) at TaC and HfLaO interface is estimated to be about 1.21 eV, and the trap energy level (Φt) is about 0.51 eV.

AB - Metal-oxide-semiconductor capacitors (MOSCs) incorporating atomic layer deposited (ALD) LaO/HfO2 stacked gate dielectrics were fabricated, where the equivalent oxide thickness (EOT) of the high- k dielectrics is only 0.72 nm and the gate leakage (Jg) is as low as 6.8× 10-2 A/ cm2. Based on the analysis of the temperature dependence of the gate leakage current from 300 to 500 K, the main current conduction is found to be Schottky emission or Poole-Frankel emission. Moreover, the barrier height (ΦB) at TaC and HfLaO interface is estimated to be about 1.21 eV, and the trap energy level (Φt) is about 0.51 eV.

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Current conduction of 0.72 nm equivalent-oxide-thickness LaO/HfO ₂ stacked gate dielectrics

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