Current conduction of 0.72 nm equivalent-oxide-thickness LaO/HfO 2 stacked gate dielectrics

Chuan Hsi Liu, Hung Wen Chen, Shung Yuan Chen, Heng Sheng Huang, Li Wei Cheng

Research output: Contribution to journalArticle

34 Citations (Scopus)

Abstract

Metal-oxide-semiconductor capacitors (MOSCs) incorporating atomic layer deposited (ALD) LaO/HfO2 stacked gate dielectrics were fabricated, where the equivalent oxide thickness (EOT) of the high- k dielectrics is only 0.72 nm and the gate leakage (Jg) is as low as 6.8× 10-2 A/ cm2. Based on the analysis of the temperature dependence of the gate leakage current from 300 to 500 K, the main current conduction is found to be Schottky emission or Poole-Frankel emission. Moreover, the barrier height (ΦB) at TaC and HfLaO interface is estimated to be about 1.21 eV, and the trap energy level (Φt) is about 0.51 eV.

Original languageEnglish
Article number012103
JournalApplied Physics Letters
Volume95
Issue number1
DOIs
Publication statusPublished - 2009 Jul 20

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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