Current conduction of 0.72 nm equivalent-oxide-thickness LaO/HfO 2 stacked gate dielectrics

Chuan Hsi Liu, Hung Wen Chen, Shung Yuan Chen, Heng Sheng Huang, Li Wei Cheng

Research output: Contribution to journalArticle

33 Citations (Scopus)

Abstract

Metal-oxide-semiconductor capacitors (MOSCs) incorporating atomic layer deposited (ALD) LaO/HfO2 stacked gate dielectrics were fabricated, where the equivalent oxide thickness (EOT) of the high- k dielectrics is only 0.72 nm and the gate leakage (Jg) is as low as 6.8× 10-2 A/ cm2. Based on the analysis of the temperature dependence of the gate leakage current from 300 to 500 K, the main current conduction is found to be Schottky emission or Poole-Frankel emission. Moreover, the barrier height (ΦB) at TaC and HfLaO interface is estimated to be about 1.21 eV, and the trap energy level (Φt) is about 0.51 eV.

Original languageEnglish
Article number012103
JournalApplied Physics Letters
Volume95
Issue number1
DOIs
Publication statusPublished - 2009 Jul 20

Fingerprint

conduction
oxides
leakage
metal oxide semiconductors
capacitors
energy levels
traps
temperature dependence

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Current conduction of 0.72 nm equivalent-oxide-thickness LaO/HfO 2 stacked gate dielectrics. / Liu, Chuan Hsi; Chen, Hung Wen; Chen, Shung Yuan; Huang, Heng Sheng; Cheng, Li Wei.

In: Applied Physics Letters, Vol. 95, No. 1, 012103, 20.07.2009.

Research output: Contribution to journalArticle

Liu, Chuan Hsi ; Chen, Hung Wen ; Chen, Shung Yuan ; Huang, Heng Sheng ; Cheng, Li Wei. / Current conduction of 0.72 nm equivalent-oxide-thickness LaO/HfO 2 stacked gate dielectrics. In: Applied Physics Letters. 2009 ; Vol. 95, No. 1.
@article{55ae3e4fb8ed4799a2d56a1fdc108ef9,
title = "Current conduction of 0.72 nm equivalent-oxide-thickness LaO/HfO 2 stacked gate dielectrics",
abstract = "Metal-oxide-semiconductor capacitors (MOSCs) incorporating atomic layer deposited (ALD) LaO/HfO2 stacked gate dielectrics were fabricated, where the equivalent oxide thickness (EOT) of the high- k dielectrics is only 0.72 nm and the gate leakage (Jg) is as low as 6.8× 10-2 A/ cm2. Based on the analysis of the temperature dependence of the gate leakage current from 300 to 500 K, the main current conduction is found to be Schottky emission or Poole-Frankel emission. Moreover, the barrier height (ΦB) at TaC and HfLaO interface is estimated to be about 1.21 eV, and the trap energy level (Φt) is about 0.51 eV.",
author = "Liu, {Chuan Hsi} and Chen, {Hung Wen} and Chen, {Shung Yuan} and Huang, {Heng Sheng} and Cheng, {Li Wei}",
year = "2009",
month = "7",
day = "20",
doi = "10.1063/1.3170235",
language = "English",
volume = "95",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "1",

}

TY - JOUR

T1 - Current conduction of 0.72 nm equivalent-oxide-thickness LaO/HfO 2 stacked gate dielectrics

AU - Liu, Chuan Hsi

AU - Chen, Hung Wen

AU - Chen, Shung Yuan

AU - Huang, Heng Sheng

AU - Cheng, Li Wei

PY - 2009/7/20

Y1 - 2009/7/20

N2 - Metal-oxide-semiconductor capacitors (MOSCs) incorporating atomic layer deposited (ALD) LaO/HfO2 stacked gate dielectrics were fabricated, where the equivalent oxide thickness (EOT) of the high- k dielectrics is only 0.72 nm and the gate leakage (Jg) is as low as 6.8× 10-2 A/ cm2. Based on the analysis of the temperature dependence of the gate leakage current from 300 to 500 K, the main current conduction is found to be Schottky emission or Poole-Frankel emission. Moreover, the barrier height (ΦB) at TaC and HfLaO interface is estimated to be about 1.21 eV, and the trap energy level (Φt) is about 0.51 eV.

AB - Metal-oxide-semiconductor capacitors (MOSCs) incorporating atomic layer deposited (ALD) LaO/HfO2 stacked gate dielectrics were fabricated, where the equivalent oxide thickness (EOT) of the high- k dielectrics is only 0.72 nm and the gate leakage (Jg) is as low as 6.8× 10-2 A/ cm2. Based on the analysis of the temperature dependence of the gate leakage current from 300 to 500 K, the main current conduction is found to be Schottky emission or Poole-Frankel emission. Moreover, the barrier height (ΦB) at TaC and HfLaO interface is estimated to be about 1.21 eV, and the trap energy level (Φt) is about 0.51 eV.

UR - http://www.scopus.com/inward/record.url?scp=67650504946&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=67650504946&partnerID=8YFLogxK

U2 - 10.1063/1.3170235

DO - 10.1063/1.3170235

M3 - Article

AN - SCOPUS:67650504946

VL - 95

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 1

M1 - 012103

ER -