Current conduction mechanisms of 0.65 nm equivalent oxide thickness HfZrLaO thin films

H. W. Chen; H. W. Hsu; S. Y. Chen; H. S. Huang; M. C. Wang; C. H. Liu

doi:10.1109/INEC.2011.5991686

Current conduction mechanisms of 0.65 nm equivalent oxide thickness HfZrLaO thin films

H. W. Chen^*, H. W. Hsu, S. Y. Chen, H. S. Huang, M. C. Wang, C. H. Liu

^*Corresponding author for this work

Department of Mechatronic Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Metal-oxide-semiconductor (MOS) capacitors incorporating atomic-layer-deposited (ALD) LaO/HfZrO stacked gate dielectrics were fabricated. The experimental results reveal that the equivalent oxide thickness (EOT) is 0.65 nm, and the gate leakage current density (Jg) is only 1.9 A/cm². The main current conduction mechanisms are Schottky emission, Poole-Frankel emission, and Fowler-Nordheim tunneling. The barrier height (Φ_B) is estimated to be about 1.07 eV at TaC and HfZrLaO interface.

Original language	English
Title of host publication	4th IEEE International NanoElectronics Conference, INEC 2011
DOIs	https://doi.org/10.1109/INEC.2011.5991686
Publication status	Published - 2011
Event	4th IEEE International Nanoelectronics Conference, INEC 2011 - Tao-Yuan, Taiwan Duration: 2011 Jun 21 → 2011 Jun 24

Publication series

Name	Proceedings - International NanoElectronics Conference, INEC
ISSN (Print)	2159-3523

Other

Other	4th IEEE International Nanoelectronics Conference, INEC 2011
Country/Territory	Taiwan
City	Tao-Yuan
Period	2011/06/21 → 2011/06/24

Keywords

HfZrLaO
carrier transportation
conduction mechanism
high-K
metal gate

ASJC Scopus subject areas

Electrical and Electronic Engineering

Access to Document

10.1109/INEC.2011.5991686

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Chen, HW, Hsu, HW, Chen, SY, Huang, HS, Wang, MC & Liu, CH 2011, Current conduction mechanisms of 0.65 nm equivalent oxide thickness HfZrLaO thin films. in 4th IEEE International NanoElectronics Conference, INEC 2011., 5991686, Proceedings - International NanoElectronics Conference, INEC, 4th IEEE International Nanoelectronics Conference, INEC 2011, Tao-Yuan, Taiwan, 2011/06/21. https://doi.org/10.1109/INEC.2011.5991686

@inproceedings{14d6cfc0cb3c4304926d3d09374a30fb,

title = "Current conduction mechanisms of 0.65 nm equivalent oxide thickness HfZrLaO thin films",

abstract = "Metal-oxide-semiconductor (MOS) capacitors incorporating atomic-layer-deposited (ALD) LaO/HfZrO stacked gate dielectrics were fabricated. The experimental results reveal that the equivalent oxide thickness (EOT) is 0.65 nm, and the gate leakage current density (Jg) is only 1.9 A/cm2. The main current conduction mechanisms are Schottky emission, Poole-Frankel emission, and Fowler-Nordheim tunneling. The barrier height (ΦB) is estimated to be about 1.07 eV at TaC and HfZrLaO interface.",

keywords = "HfZrLaO, carrier transportation, conduction mechanism, high-K, metal gate",

author = "Chen, {H. W.} and Hsu, {H. W.} and Chen, {S. Y.} and Huang, {H. S.} and Wang, {M. C.} and Liu, {C. H.}",

year = "2011",

doi = "10.1109/INEC.2011.5991686",

language = "English",

isbn = "9781457703799",

series = "Proceedings - International NanoElectronics Conference, INEC",

booktitle = "4th IEEE International NanoElectronics Conference, INEC 2011",

note = "4th IEEE International Nanoelectronics Conference, INEC 2011 ; Conference date: 21-06-2011 Through 24-06-2011",

}

TY - GEN

T1 - Current conduction mechanisms of 0.65 nm equivalent oxide thickness HfZrLaO thin films

AU - Chen, H. W.

AU - Hsu, H. W.

AU - Chen, S. Y.

AU - Huang, H. S.

AU - Wang, M. C.

AU - Liu, C. H.

PY - 2011

Y1 - 2011

N2 - Metal-oxide-semiconductor (MOS) capacitors incorporating atomic-layer-deposited (ALD) LaO/HfZrO stacked gate dielectrics were fabricated. The experimental results reveal that the equivalent oxide thickness (EOT) is 0.65 nm, and the gate leakage current density (Jg) is only 1.9 A/cm2. The main current conduction mechanisms are Schottky emission, Poole-Frankel emission, and Fowler-Nordheim tunneling. The barrier height (ΦB) is estimated to be about 1.07 eV at TaC and HfZrLaO interface.

AB - Metal-oxide-semiconductor (MOS) capacitors incorporating atomic-layer-deposited (ALD) LaO/HfZrO stacked gate dielectrics were fabricated. The experimental results reveal that the equivalent oxide thickness (EOT) is 0.65 nm, and the gate leakage current density (Jg) is only 1.9 A/cm2. The main current conduction mechanisms are Schottky emission, Poole-Frankel emission, and Fowler-Nordheim tunneling. The barrier height (ΦB) is estimated to be about 1.07 eV at TaC and HfZrLaO interface.

KW - HfZrLaO

KW - carrier transportation

KW - conduction mechanism

KW - high-K

KW - metal gate

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M3 - Conference contribution

AN - SCOPUS:80053023946

SN - 9781457703799

T3 - Proceedings - International NanoElectronics Conference, INEC

BT - 4th IEEE International NanoElectronics Conference, INEC 2011

T2 - 4th IEEE International Nanoelectronics Conference, INEC 2011

Y2 - 21 June 2011 through 24 June 2011

ER -

Current conduction mechanisms of 0.65 nm equivalent oxide thickness HfZrLaO thin films

Abstract

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Keywords

ASJC Scopus subject areas

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