Current conduction mechanisms of 0.65 nm equivalent oxide thickness HfZrLaO thin films

H. W. Chen, H. W. Hsu, S. Y. Chen, H. S. Huang, M. C. Wang, C. H. Liu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Metal-oxide-semiconductor (MOS) capacitors incorporating atomic-layer-deposited (ALD) LaO/HfZrO stacked gate dielectrics were fabricated. The experimental results reveal that the equivalent oxide thickness (EOT) is 0.65 nm, and the gate leakage current density (Jg) is only 1.9 A/cm2. The main current conduction mechanisms are Schottky emission, Poole-Frankel emission, and Fowler-Nordheim tunneling. The barrier height (ΦB) is estimated to be about 1.07 eV at TaC and HfZrLaO interface.

Original languageEnglish
Title of host publication4th IEEE International NanoElectronics Conference, INEC 2011
DOIs
Publication statusPublished - 2011 Sep 26
Event4th IEEE International Nanoelectronics Conference, INEC 2011 - Tao-Yuan, Taiwan
Duration: 2011 Jun 212011 Jun 24

Publication series

NameProceedings - International NanoElectronics Conference, INEC
ISSN (Print)2159-3523

Other

Other4th IEEE International Nanoelectronics Conference, INEC 2011
CountryTaiwan
CityTao-Yuan
Period11/6/2111/6/24

Keywords

  • HfZrLaO
  • carrier transportation
  • conduction mechanism
  • high-K
  • metal gate

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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    Chen, H. W., Hsu, H. W., Chen, S. Y., Huang, H. S., Wang, M. C., & Liu, C. H. (2011). Current conduction mechanisms of 0.65 nm equivalent oxide thickness HfZrLaO thin films. In 4th IEEE International NanoElectronics Conference, INEC 2011 [5991686] (Proceedings - International NanoElectronics Conference, INEC). https://doi.org/10.1109/INEC.2011.5991686