Cubic GaN grown on (0 0 1) GaAs substrate by RF plasma assisted gas source MBE

Li Wei Sung*, Hao Hsiung Lin, Chih Ta Chia

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

13 Citations (Scopus)


Cubic GaN films have been grown on (0 0 1) GaAs substrates by using RF plasma assisted gas source MBE. The cubic GaN films were deposited at different Ga-flux to N-flux ratios that were determined by deposition rates directly. Three growth regimes are defined in the cubic GaN growth diagram. The optical quality of these films was measured by photoluminescence (PL). Micro-Raman scattering was performed to analyze the crystallization of the films. The optimal flux ratio for cubic GaN grown at Ts = 720°C is on the boundary between intermediate Ga stable regime and Ga droplet regime.

Original languageEnglish
Pages (from-to)320-324
Number of pages5
JournalJournal of Crystal Growth
Issue number3
Publication statusPublished - 2002 Jun


  • A1. Crystal structures
  • A1. Growth models
  • A3. Molecular beam epitaxy
  • B1. Nitrides
  • B2. Semiconducting gallium compounds

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry


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