Cubic GaN grown on (0 0 1) GaAs substrate by RF plasma assisted gas source MBE

Li Wei Sung; Hao Hsiung Lin; Chih Ta Chia

doi:10.1016/S0022-0248(02)01289-7

Cubic GaN grown on (0 0 1) GaAs substrate by RF plasma assisted gas source MBE

Li Wei Sung^*, Hao Hsiung Lin, Chih Ta Chia

^*Corresponding author for this work

Department of Physics

Research output: Contribution to journal › Article › peer-review

13 Citations (Scopus)

Abstract

Cubic GaN films have been grown on (0 0 1) GaAs substrates by using RF plasma assisted gas source MBE. The cubic GaN films were deposited at different Ga-flux to N-flux ratios that were determined by deposition rates directly. Three growth regimes are defined in the cubic GaN growth diagram. The optical quality of these films was measured by photoluminescence (PL). Micro-Raman scattering was performed to analyze the crystallization of the films. The optimal flux ratio for cubic GaN grown at T_s = 720°C is on the boundary between intermediate Ga stable regime and Ga droplet regime.

Original language	English
Pages (from-to)	320-324
Number of pages	5
Journal	Journal of Crystal Growth
Volume	241
Issue number	3
DOIs	https://doi.org/10.1016/S0022-0248(02)01289-7
Publication status	Published - 2002 Jun

Keywords

A1. Crystal structures
A1. Growth models
A3. Molecular beam epitaxy
B1. Nitrides
B2. Semiconducting gallium compounds

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

Access to Document

10.1016/S0022-0248(02)01289-7

Cite this

@article{c2333aa6bb394531a05e816e27e2a564,

title = "Cubic GaN grown on (0 0 1) GaAs substrate by RF plasma assisted gas source MBE",

abstract = "Cubic GaN films have been grown on (0 0 1) GaAs substrates by using RF plasma assisted gas source MBE. The cubic GaN films were deposited at different Ga-flux to N-flux ratios that were determined by deposition rates directly. Three growth regimes are defined in the cubic GaN growth diagram. The optical quality of these films was measured by photoluminescence (PL). Micro-Raman scattering was performed to analyze the crystallization of the films. The optimal flux ratio for cubic GaN grown at Ts = 720°C is on the boundary between intermediate Ga stable regime and Ga droplet regime.",

keywords = "A1. Crystal structures, A1. Growth models, A3. Molecular beam epitaxy, B1. Nitrides, B2. Semiconducting gallium compounds",

author = "Sung, {Li Wei} and Lin, {Hao Hsiung} and Chia, {Chih Ta}",

note = "Funding Information: This work was supported by the National Science Council of the Republic of China under contract No. NSC 89-2215-E-002 –054.",

year = "2002",

month = jun,

doi = "10.1016/S0022-0248(02)01289-7",

language = "English",

volume = "241",

pages = "320--324",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier",

number = "3",

}

TY - JOUR

T1 - Cubic GaN grown on (0 0 1) GaAs substrate by RF plasma assisted gas source MBE

AU - Sung, Li Wei

AU - Lin, Hao Hsiung

AU - Chia, Chih Ta

N1 - Funding Information: This work was supported by the National Science Council of the Republic of China under contract No. NSC 89-2215-E-002 –054.

PY - 2002/6

Y1 - 2002/6

N2 - Cubic GaN films have been grown on (0 0 1) GaAs substrates by using RF plasma assisted gas source MBE. The cubic GaN films were deposited at different Ga-flux to N-flux ratios that were determined by deposition rates directly. Three growth regimes are defined in the cubic GaN growth diagram. The optical quality of these films was measured by photoluminescence (PL). Micro-Raman scattering was performed to analyze the crystallization of the films. The optimal flux ratio for cubic GaN grown at Ts = 720°C is on the boundary between intermediate Ga stable regime and Ga droplet regime.

AB - Cubic GaN films have been grown on (0 0 1) GaAs substrates by using RF plasma assisted gas source MBE. The cubic GaN films were deposited at different Ga-flux to N-flux ratios that were determined by deposition rates directly. Three growth regimes are defined in the cubic GaN growth diagram. The optical quality of these films was measured by photoluminescence (PL). Micro-Raman scattering was performed to analyze the crystallization of the films. The optimal flux ratio for cubic GaN grown at Ts = 720°C is on the boundary between intermediate Ga stable regime and Ga droplet regime.

KW - A1. Crystal structures

KW - A1. Growth models

KW - A3. Molecular beam epitaxy

KW - B1. Nitrides

KW - B2. Semiconducting gallium compounds

UR - http://www.scopus.com/inward/record.url?scp=0036606618&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0036606618&partnerID=8YFLogxK

U2 - 10.1016/S0022-0248(02)01289-7

DO - 10.1016/S0022-0248(02)01289-7

M3 - Article

AN - SCOPUS:0036606618

SN - 0022-0248

VL - 241

SP - 320

EP - 324

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 3

ER -

Cubic GaN grown on (0 0 1) GaAs substrate by RF plasma assisted gas source MBE

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this