Crystallized ohmic contact effect in algan/gan high electron mobility transistor

Sheng Yu Liao, Tsu Chang, Hsiao Hsuan Hsu, Chun Hu Cheng, Liann Be Chang, Chin Pao Cheng, Tun Chien Teng

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

In this study, we investigate the grain size effect of high electron mobility transistor devices with ohmic contact metals of stacked Ti/Al/Ni/Au and Ti/Al/Mo/Au. In addition to a comparison of electrical characteristics, the ohmic contacts were also examined by a scratch test for the observation of adhesion behavior. The experimental results demonstrate that the metal grain size is strongly dependent on metal adhesion, which may lead to bonding issues. Moreover, the grain-induced lateral stress lowers the drive current and increases the off-state current owing to the degraded gate swing and transconductance of transistor switching characteristics.

Original languageEnglish
Article number081001
JournalJapanese Journal of Applied Physics
Volume52
Issue number8
DOIs
Publication statusPublished - 2013 Aug 1

Fingerprint

Ohmic contacts
High electron mobility transistors
high electron mobility transistors
electric contacts
adhesion
Adhesion
grain size
Metals
metals
Transconductance
transconductance
Transistors
transistors

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Crystallized ohmic contact effect in algan/gan high electron mobility transistor. / Liao, Sheng Yu; Chang, Tsu; Hsu, Hsiao Hsuan; Cheng, Chun Hu; Chang, Liann Be; Cheng, Chin Pao; Teng, Tun Chien.

In: Japanese Journal of Applied Physics, Vol. 52, No. 8, 081001, 01.08.2013.

Research output: Contribution to journalArticle

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