Crystallization mechanism and recording characteristics of GeCu/Si bilayer for write-once blue laser optical recording

S. L. Ou; P. C. Kuo; T. L. Tsai; C. L. Shen; C. P. Cheng; C. Y. Yeh; H. F. Chang; C. T. Lee; D. Chiang

doi:10.1109/INEC.2011.5991749

Crystallization mechanism and recording characteristics of GeCu/Si bilayer for write-once blue laser optical recording

S. L. Ou^*, P. C. Kuo, T. L. Tsai, C. L. Shen, C. P. Cheng, C. Y. Yeh, H. F. Chang, C. T. Lee, D. Chiang

^*Corresponding author for this work

Department of Mechatronic Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

GeCu(6 nm)/Si(6 nm) bilayer recording thin film was prepared by magnetron sputtering on nature oxidized silicon wafer and polycarbonate substrate by magnetron sputtering. The thermal property, crystallization mechanism, and recording characteristics of the GeCu/Si bilayer thin film were investigated. Thermal analysis shows that the GeCu/Si bilayer thin film has two reflectivity changes with the temperature ranges, 120°C ∼ 165°C and 310°C∼ 340°C. Dynamic tests show that the optimum jitter values at recording speeds of 1X, 2X, 4X, and 5X are 5.8%, 6%, 5.9%, and 6%, respectively. It indicates that GeCu/Si bilayer film is potentially useful in write-once blu-ray optical disc.

Original language	English
Title of host publication	4th IEEE International NanoElectronics Conference, INEC 2011
DOIs	https://doi.org/10.1109/INEC.2011.5991749
Publication status	Published - 2011
Event	4th IEEE International Nanoelectronics Conference, INEC 2011 - Tao-Yuan, Taiwan Duration: 2011 Jun 21 → 2011 Jun 24

Publication series

Name	Proceedings - International NanoElectronics Conference, INEC
ISSN (Print)	2159-3523

Other

Other	4th IEEE International Nanoelectronics Conference, INEC 2011
Country/Territory	Taiwan
City	Tao-Yuan
Period	2011/06/21 → 2011/06/24

Keywords

GeCu/Si bilayer
write-once blue laser optical recording

ASJC Scopus subject areas

Electrical and Electronic Engineering

Access to Document

10.1109/INEC.2011.5991749

Cite this

Ou, S. L., Kuo, P. C., Tsai, T. L., Shen, C. L., Cheng, C. P., Yeh, C. Y., Chang, H. F., Lee, C. T., & Chiang, D. (2011). Crystallization mechanism and recording characteristics of GeCu/Si bilayer for write-once blue laser optical recording. In 4th IEEE International NanoElectronics Conference, INEC 2011 Article 5991749 (Proceedings - International NanoElectronics Conference, INEC). https://doi.org/10.1109/INEC.2011.5991749

Crystallization mechanism and recording characteristics of GeCu/Si bilayer for write-once blue laser optical recording. / Ou, S. L.; Kuo, P. C.; Tsai, T. L. et al.
4th IEEE International NanoElectronics Conference, INEC 2011. 2011. 5991749 (Proceedings - International NanoElectronics Conference, INEC).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Ou, SL, Kuo, PC, Tsai, TL, Shen, CL, Cheng, CP, Yeh, CY, Chang, HF, Lee, CT & Chiang, D 2011, Crystallization mechanism and recording characteristics of GeCu/Si bilayer for write-once blue laser optical recording. in 4th IEEE International NanoElectronics Conference, INEC 2011., 5991749, Proceedings - International NanoElectronics Conference, INEC, 4th IEEE International Nanoelectronics Conference, INEC 2011, Tao-Yuan, Taiwan, 2011/06/21. https://doi.org/10.1109/INEC.2011.5991749

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title = "Crystallization mechanism and recording characteristics of GeCu/Si bilayer for write-once blue laser optical recording",

abstract = "GeCu(6 nm)/Si(6 nm) bilayer recording thin film was prepared by magnetron sputtering on nature oxidized silicon wafer and polycarbonate substrate by magnetron sputtering. The thermal property, crystallization mechanism, and recording characteristics of the GeCu/Si bilayer thin film were investigated. Thermal analysis shows that the GeCu/Si bilayer thin film has two reflectivity changes with the temperature ranges, 120°C ∼ 165°C and 310°C∼ 340°C. Dynamic tests show that the optimum jitter values at recording speeds of 1X, 2X, 4X, and 5X are 5.8%, 6%, 5.9%, and 6%, respectively. It indicates that GeCu/Si bilayer film is potentially useful in write-once blu-ray optical disc.",

keywords = "GeCu/Si bilayer, write-once blue laser optical recording",

author = "Ou, {S. L.} and Kuo, {P. C.} and Tsai, {T. L.} and Shen, {C. L.} and Cheng, {C. P.} and Yeh, {C. Y.} and Chang, {H. F.} and Lee, {C. T.} and D. Chiang",

year = "2011",

doi = "10.1109/INEC.2011.5991749",

language = "English",

isbn = "9781457703799",

series = "Proceedings - International NanoElectronics Conference, INEC",

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note = "4th IEEE International Nanoelectronics Conference, INEC 2011 ; Conference date: 21-06-2011 Through 24-06-2011",

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T1 - Crystallization mechanism and recording characteristics of GeCu/Si bilayer for write-once blue laser optical recording

AU - Ou, S. L.

AU - Kuo, P. C.

AU - Tsai, T. L.

AU - Shen, C. L.

AU - Cheng, C. P.

AU - Yeh, C. Y.

AU - Chang, H. F.

AU - Lee, C. T.

AU - Chiang, D.

PY - 2011

Y1 - 2011

N2 - GeCu(6 nm)/Si(6 nm) bilayer recording thin film was prepared by magnetron sputtering on nature oxidized silicon wafer and polycarbonate substrate by magnetron sputtering. The thermal property, crystallization mechanism, and recording characteristics of the GeCu/Si bilayer thin film were investigated. Thermal analysis shows that the GeCu/Si bilayer thin film has two reflectivity changes with the temperature ranges, 120°C ∼ 165°C and 310°C∼ 340°C. Dynamic tests show that the optimum jitter values at recording speeds of 1X, 2X, 4X, and 5X are 5.8%, 6%, 5.9%, and 6%, respectively. It indicates that GeCu/Si bilayer film is potentially useful in write-once blu-ray optical disc.

AB - GeCu(6 nm)/Si(6 nm) bilayer recording thin film was prepared by magnetron sputtering on nature oxidized silicon wafer and polycarbonate substrate by magnetron sputtering. The thermal property, crystallization mechanism, and recording characteristics of the GeCu/Si bilayer thin film were investigated. Thermal analysis shows that the GeCu/Si bilayer thin film has two reflectivity changes with the temperature ranges, 120°C ∼ 165°C and 310°C∼ 340°C. Dynamic tests show that the optimum jitter values at recording speeds of 1X, 2X, 4X, and 5X are 5.8%, 6%, 5.9%, and 6%, respectively. It indicates that GeCu/Si bilayer film is potentially useful in write-once blu-ray optical disc.

KW - GeCu/Si bilayer

KW - write-once blue laser optical recording

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T3 - Proceedings - International NanoElectronics Conference, INEC

BT - 4th IEEE International NanoElectronics Conference, INEC 2011

T2 - 4th IEEE International Nanoelectronics Conference, INEC 2011

Y2 - 21 June 2011 through 24 June 2011

ER -

Crystallization mechanism and recording characteristics of GeCu/Si bilayer for write-once blue laser optical recording

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