Crystallization mechanism and recording characteristics of GeCu/Si bilayer for write-once blue laser optical recording

S. L. Ou, P. C. Kuo, T. L. Tsai, C. L. Shen, C. P. Cheng, C. Y. Yeh, H. F. Chang, C. T. Lee, D. Chiang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

GeCu(6 nm)/Si(6 nm) bilayer recording thin film was prepared by magnetron sputtering on nature oxidized silicon wafer and polycarbonate substrate by magnetron sputtering. The thermal property, crystallization mechanism, and recording characteristics of the GeCu/Si bilayer thin film were investigated. Thermal analysis shows that the GeCu/Si bilayer thin film has two reflectivity changes with the temperature ranges, 120°C ∼ 165°C and 310°C∼ 340°C. Dynamic tests show that the optimum jitter values at recording speeds of 1X, 2X, 4X, and 5X are 5.8%, 6%, 5.9%, and 6%, respectively. It indicates that GeCu/Si bilayer film is potentially useful in write-once blu-ray optical disc.

Original languageEnglish
Title of host publication4th IEEE International NanoElectronics Conference, INEC 2011
DOIs
Publication statusPublished - 2011 Sep 26
Event4th IEEE International Nanoelectronics Conference, INEC 2011 - Tao-Yuan, Taiwan
Duration: 2011 Jun 212011 Jun 24

Publication series

NameProceedings - International NanoElectronics Conference, INEC
ISSN (Print)2159-3523

Other

Other4th IEEE International Nanoelectronics Conference, INEC 2011
CountryTaiwan
CityTao-Yuan
Period11/6/2111/6/24

Keywords

  • GeCu/Si bilayer
  • write-once blue laser optical recording

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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    Ou, S. L., Kuo, P. C., Tsai, T. L., Shen, C. L., Cheng, C. P., Yeh, C. Y., Chang, H. F., Lee, C. T., & Chiang, D. (2011). Crystallization mechanism and recording characteristics of GeCu/Si bilayer for write-once blue laser optical recording. In 4th IEEE International NanoElectronics Conference, INEC 2011 [5991749] (Proceedings - International NanoElectronics Conference, INEC). https://doi.org/10.1109/INEC.2011.5991749