Crystalline Phase Segregation of Quantum-Dots-Passivated CH3NH3PbI3 Film via Argon Plasma Treatment

Pao Hsun Huang, Shao Yu Liu, Chuan Hsi Liu*, Na Fu Wang, Chien Jung Huang*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review


In this study, a composite perovskite film composed of lead cesium triiodide (CsPbI3) quantum dots (QDs) and methylammonium lead iodide (CH3NH3PbI3; MAPbI3) was proposed. The CsPbI3 QDs prepared by hot-injecting were used as an anti-solvent in precursors to passivate the surface of this composite perovskite film. The further argon (Ar) plasma treatment improves the surface of the film. The effects of the powers from 100 to 200 W on the composite perovskite film structure, chemical element composition, and optical properties were studied. The experimental results demonstrate that the CsPbI3 QDs passivation boosts the ultraviolet light absorption (350–450 nm) and inhibits the formation of the PbI2 phase. Furthermore, Ar plasma treatment effectively improved CsPbI3 QDs passivation on MAPbI3 film. The powers lower than 140 W cause C=O bonds to dissolve and coordination bonds to form between OA carboxyl moieties and undercoordinated Pb2+ ions. At 160 and 140 W, the obvious crystal phase segregation and a decrease in light absorption are observed, respectively. Meanwhile, the strong bombardment of Ar ions at higher than 160 W causes the severe degradation of MAPbI3 film.

Original languageEnglish
Article number1556
Issue number11
Publication statusPublished - 2022 Nov


  • Ar plasma
  • perovskite
  • phase segregation
  • quantum dots

ASJC Scopus subject areas

  • General Chemical Engineering
  • General Materials Science
  • Condensed Matter Physics
  • Inorganic Chemistry


Dive into the research topics of 'Crystalline Phase Segregation of Quantum-Dots-Passivated CH3NH3PbI3 Film via Argon Plasma Treatment'. Together they form a unique fingerprint.

Cite this