@inproceedings{bcf6256749a848d4b0771757a545027b,
title = "Cryogenic Endurance of Anti-ferroelectric and Ferroelectric Hf\_1-xZr\_XO\_2 for Quantum Computing Applications",
abstract = "The classical memory device with cryogenic operation is in high demanded for quantum information processing. The cryogenic endurance of anti-ferroelectric (AFE) and ferroelectric (FE) Hf\_1-xZr\_xO\_2 capacitors is investigated for ∼ 1010 cycles (80 K). Moreover, the AFE capacitor exhibits a high speed response with 80\% normalized switching 2P\_r,sw for t\_p= 1μs compared to 60\% for the FE capacitor at 80 K.",
keywords = "Antiferroelectric, Cryogenic, Endurance, Ferroelectric",
author = "Hsiang, \{K. Y.\} and Lee, \{J. Y.\} and Lou, \{Z. F.\} and Chang, \{F. S.\} and Li, \{Z. X.\} and Liu, \{C. W.\} and Hou, \{T. H.\} and P. Su and Lee, \{M. H.\}",
note = "Publisher Copyright: {\textcopyright} 2023 IEEE.; 61st IEEE International Reliability Physics Symposium, IRPS 2023 ; Conference date: 26-03-2023 Through 30-03-2023",
year = "2023",
doi = "10.1109/IRPS48203.2023.10118311",
language = "English",
series = "IEEE International Reliability Physics Symposium Proceedings",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2023 IEEE International Reliability Physics Symposium, IRPS 2023 - Proceedings",
}