@inproceedings{bcf6256749a848d4b0771757a545027b,
title = "Cryogenic Endurance of Anti-ferroelectric and Ferroelectric Hf_1-xZr_XO_2 for Quantum Computing Applications",
abstract = "The classical memory device with cryogenic operation is in high demanded for quantum information processing. The cryogenic endurance of anti-ferroelectric (AFE) and ferroelectric (FE) Hf_1-xZr_xO_2 capacitors is investigated for ∼ 1010 cycles (80 K). Moreover, the AFE capacitor exhibits a high speed response with 80% normalized switching 2P_r,sw for t_p= 1μs compared to 60% for the FE capacitor at 80 K.",
keywords = "Antiferroelectric, Cryogenic, Endurance, Ferroelectric",
author = "Hsiang, {K. Y.} and Lee, {J. Y.} and Lou, {Z. F.} and Chang, {F. S.} and Li, {Z. X.} and Liu, {C. W.} and Hou, {T. H.} and P. Su and Lee, {M. H.}",
note = "Publisher Copyright: {\textcopyright} 2023 IEEE.; 61st IEEE International Reliability Physics Symposium, IRPS 2023 ; Conference date: 26-03-2023 Through 30-03-2023",
year = "2023",
doi = "10.1109/IRPS48203.2023.10118311",
language = "English",
series = "IEEE International Reliability Physics Symposium Proceedings",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2023 IEEE International Reliability Physics Symposium, IRPS 2023 - Proceedings",
}