INIS
oscillations
100%
silicon oxides
100%
electrons
100%
transistors
100%
energy
25%
power
25%
devices
25%
size
25%
cost
25%
temperature range 0273-0400 k
25%
quantum dots
25%
voltage
25%
oxides
25%
tunneling
25%
thickness
25%
periodicity
25%
junctions
25%
excited states
25%
nanoelectronics
25%
energy levels
25%
point contacts
25%
Chemistry
Electron Particle
100%
Coulomb Blockade
100%
Silicon Oxide
100%
Oscillation
100%
Ambient Reaction Temperature
25%
Particle Size
25%
Quantum Dot
25%
Thickness
25%
Voltage
25%
Energy
25%
Tunneling
25%
Oxide
25%
Excited State
25%
Electron Energy Level
25%
Physics
Oscillation
100%
Electrons
100%
Room Temperature
50%
Quantum Dot
50%
Oxide
50%
Electric Potential
50%
Excitation
50%
Energy Levels
50%
Electron Tunneling
50%
Material Science
Oxide
100%
Transistor
100%
Silicon
100%
Temperature
50%
Devices
50%
Nanoelectronics
50%
Chemical Engineering
Quantum Dot
100%
Temperature
100%
Oxide
100%
Single Electron Transistor
100%
Engineering
Electron Charging Effect
50%
Electron Charging Energy
50%