Coulomb blockade oscillations in ultrathin gate oxide silicon single-electron transistors

Yue Min Wan; Kuo Dong Huang; S. F. Hu; C. L. Sung; Y. C. Chou

doi:10.1063/1.1921335

Coulomb blockade oscillations in ultrathin gate oxide silicon single-electron transistors

Yue Min Wan^*, Kuo Dong Huang, S. F. Hu, C. L. Sung, Y. C. Chou

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

Ultrathin oxide-gated (thickness ~6 nm) point-contact junctions have been fabricated to explore single-electron charging effects in strongly gate-dot-coupled polycrystallinesilicon transistors. Current-voltage (I-V) measurements show periodic current oscillations near room temperature. Analysis of the energy-level spacing relates the electron charging energy to a quantum dot of size ~8 nm, and also suggests electron tunneling is via the first excited state. These low-power ~30 pW and low-cost devices can be useful for the next generation nanoelectronics.

Original language	English
Article number	116106
Journal	Journal of Applied Physics
Volume	97
Issue number	11
DOIs	https://doi.org/10.1063/1.1921335
Publication status	Published - 2005
Externally published	Yes

ASJC Scopus subject areas

General Physics and Astronomy

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10.1063/1.1921335

Cite this

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title = "Coulomb blockade oscillations in ultrathin gate oxide silicon single-electron transistors",

abstract = "Ultrathin oxide-gated (thickness ~6 nm) point-contact junctions have been fabricated to explore single-electron charging effects in strongly gate-dot-coupled polycrystallinesilicon transistors. Current-voltage (I-V) measurements show periodic current oscillations near room temperature. Analysis of the energy-level spacing relates the electron charging energy to a quantum dot of size ~8 nm, and also suggests electron tunneling is via the first excited state. These low-power ~30 pW and low-cost devices can be useful for the next generation nanoelectronics.",

author = "Wan, {Yue Min} and Huang, {Kuo Dong} and Hu, {S. F.} and Sung, {C. L.} and Chou, {Y. C.}",

note = "Funding Information: The authors are gratefully indebted to the research staff in the National Nano Device Laboratories (NDL) for providing much experimental assistance and also to Professor G. W. Shuy for many stimulating discussions. This work was financially supported by the National Science Council of the Republic of China under Contract Nos. NSC91-2112-M-214-001, NSC92-2215-E-492-008, ISU92–1C-07, and ISU93-01-06. ",

year = "2005",

doi = "10.1063/1.1921335",

language = "English",

volume = "97",

journal = "Journal of Applied Physics",

issn = "0021-8979",

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T1 - Coulomb blockade oscillations in ultrathin gate oxide silicon single-electron transistors

AU - Wan, Yue Min

AU - Huang, Kuo Dong

AU - Hu, S. F.

AU - Sung, C. L.

AU - Chou, Y. C.

N1 - Funding Information: The authors are gratefully indebted to the research staff in the National Nano Device Laboratories (NDL) for providing much experimental assistance and also to Professor G. W. Shuy for many stimulating discussions. This work was financially supported by the National Science Council of the Republic of China under Contract Nos. NSC91-2112-M-214-001, NSC92-2215-E-492-008, ISU92–1C-07, and ISU93-01-06.

PY - 2005

Y1 - 2005

N2 - Ultrathin oxide-gated (thickness ~6 nm) point-contact junctions have been fabricated to explore single-electron charging effects in strongly gate-dot-coupled polycrystallinesilicon transistors. Current-voltage (I-V) measurements show periodic current oscillations near room temperature. Analysis of the energy-level spacing relates the electron charging energy to a quantum dot of size ~8 nm, and also suggests electron tunneling is via the first excited state. These low-power ~30 pW and low-cost devices can be useful for the next generation nanoelectronics.

AB - Ultrathin oxide-gated (thickness ~6 nm) point-contact junctions have been fabricated to explore single-electron charging effects in strongly gate-dot-coupled polycrystallinesilicon transistors. Current-voltage (I-V) measurements show periodic current oscillations near room temperature. Analysis of the energy-level spacing relates the electron charging energy to a quantum dot of size ~8 nm, and also suggests electron tunneling is via the first excited state. These low-power ~30 pW and low-cost devices can be useful for the next generation nanoelectronics.

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DO - 10.1063/1.1921335

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JF - Journal of Applied Physics

IS - 11

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ER -

Coulomb blockade oscillations in ultrathin gate oxide silicon single-electron transistors

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