Coulomb blockade oscillations in ultrathin gate oxide silicon single-electron transistors

Yue Min Wan, Kuo Dong Huang, S. F. Hu, C. L. Sung, Y. C. Chou

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

Ultrathin oxide-gated (thickness ~6 nm) point-contact junctions have been fabricated to explore single-electron charging effects in strongly gate-dot-coupled polycrystallinesilicon transistors. Current-voltage (I-V) measurements show periodic current oscillations near room temperature. Analysis of the energy-level spacing relates the electron charging energy to a quantum dot of size ~8 nm, and also suggests electron tunneling is via the first excited state. These low-power ~30 pW and low-cost devices can be useful for the next generation nanoelectronics.

Original languageEnglish
Article number116106
JournalJournal of Applied Physics
Volume97
Issue number11
DOIs
Publication statusPublished - 2005 Jun 30

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silicon transistors
single electron transistors
charging
oscillations
oxides
electron tunneling
electric contacts
electrons
transistors
energy levels
quantum dots
spacing
electric potential
room temperature
excitation
energy

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Coulomb blockade oscillations in ultrathin gate oxide silicon single-electron transistors. / Wan, Yue Min; Huang, Kuo Dong; Hu, S. F.; Sung, C. L.; Chou, Y. C.

In: Journal of Applied Physics, Vol. 97, No. 11, 116106, 30.06.2005.

Research output: Contribution to journalArticle

Wan, Yue Min ; Huang, Kuo Dong ; Hu, S. F. ; Sung, C. L. ; Chou, Y. C. / Coulomb blockade oscillations in ultrathin gate oxide silicon single-electron transistors. In: Journal of Applied Physics. 2005 ; Vol. 97, No. 11.
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