Coulomb blockade oscillations in ultrathin gate oxide silicon single-electron transistors

Yue Min Wan, Kuo Dong Huang, S. F. Hu, C. L. Sung, Y. C. Chou

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Abstract

Ultrathin oxide-gated (thickness ~6 nm) point-contact junctions have been fabricated to explore single-electron charging effects in strongly gate-dot-coupled polycrystallinesilicon transistors. Current-voltage (I-V) measurements show periodic current oscillations near room temperature. Analysis of the energy-level spacing relates the electron charging energy to a quantum dot of size ~8 nm, and also suggests electron tunneling is via the first excited state. These low-power ~30 pW and low-cost devices can be useful for the next generation nanoelectronics.

Original languageEnglish
Article number116106
JournalJournal of Applied Physics
Volume97
Issue number11
DOIs
Publication statusPublished - 2005 Jun 30

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ASJC Scopus subject areas

  • Physics and Astronomy(all)

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