Cost-Efficient Bidirectional ESD Protection for 650-V GaN Power HEMT With Co-Packaged Transient Voltage Suppressor

Chieh Chen Ker; Chun Yu Lin; Ming Dou Ker; Tsung Yin Chiang; Chun Chi Wang; Ryan Jiang

doi:10.1109/TDMR.2025.3640734

Cost-Efficient Bidirectional ESD Protection for 650-V GaN Power HEMT With Co-Packaged Transient Voltage Suppressor

Chieh Chen Ker
, Chun Yu Lin
, Ming Dou Ker^*
, Tsung Yin Chiang
, Chun Chi Wang
, Ryan Jiang

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Abstract

A cost-efficient electrostatic discharge (ESD) protection solution for the gate-to-source terminal of GaN-based power high-electron-mobility transistors (HEMTs) is proposed. High ESD robustness of the GaN-based power HEMT has been successfully achieved by co-packaging a transient voltage suppressor (TVS) inside the package together, while a 32.6% reduction in cost as comparing to that with on-die bidirectional ESD protection circuit can be gained. Human-body-model (HBM) ESD level exceeding ±7 kV has been verified, indicating the effectiveness of the proposed solution for protecting the gate-to-source terminal of GaN-based power HEMT.

Original language	English
Journal	IEEE Transactions on Device and Materials Reliability
DOIs	https://doi.org/10.1109/TDMR.2025.3640734
Publication status	Accepted/In press - 2025
Externally published	Yes

Keywords

Electrostatic discharge (ESD)
GaN-on-Si process
high-electron-mobility transistor (HEMT)
human body model (HBM)
human metal model (HMM)
transient voltage suppressor (TVS)

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Safety, Risk, Reliability and Quality
Electrical and Electronic Engineering

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10.1109/TDMR.2025.3640734

Cite this

@article{d941531d7a4348228dcdf747a198b832,

title = "Cost-Efficient Bidirectional ESD Protection for 650-V GaN Power HEMT With Co-Packaged Transient Voltage Suppressor",

abstract = "A cost-efficient electrostatic discharge (ESD) protection solution for the gate-to-source terminal of GaN-based power high-electron-mobility transistors (HEMTs) is proposed. High ESD robustness of the GaN-based power HEMT has been successfully achieved by co-packaging a transient voltage suppressor (TVS) inside the package together, while a 32.6\% reduction in cost as comparing to that with on-die bidirectional ESD protection circuit can be gained. Human-body-model (HBM) ESD level exceeding ±7 kV has been verified, indicating the effectiveness of the proposed solution for protecting the gate-to-source terminal of GaN-based power HEMT.",

keywords = "Electrostatic discharge (ESD), GaN-on-Si process, high-electron-mobility transistor (HEMT), human body model (HBM), human metal model (HMM), transient voltage suppressor (TVS)",

author = "Ker, \{Chieh Chen\} and Lin, \{Chun Yu\} and Ker, \{Ming Dou\} and Chiang, \{Tsung Yin\} and Wang, \{Chun Chi\} and Ryan Jiang",

note = "Publisher Copyright: {\textcopyright} 2001-2011 IEEE.",

year = "2025",

doi = "10.1109/TDMR.2025.3640734",

language = "English",

journal = "IEEE Transactions on Device and Materials Reliability",

issn = "1530-4388",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

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T1 - Cost-Efficient Bidirectional ESD Protection for 650-V GaN Power HEMT With Co-Packaged Transient Voltage Suppressor

AU - Ker, Chieh Chen

AU - Lin, Chun Yu

AU - Ker, Ming Dou

AU - Chiang, Tsung Yin

AU - Wang, Chun Chi

AU - Jiang, Ryan

PY - 2025

Y1 - 2025

N2 - A cost-efficient electrostatic discharge (ESD) protection solution for the gate-to-source terminal of GaN-based power high-electron-mobility transistors (HEMTs) is proposed. High ESD robustness of the GaN-based power HEMT has been successfully achieved by co-packaging a transient voltage suppressor (TVS) inside the package together, while a 32.6% reduction in cost as comparing to that with on-die bidirectional ESD protection circuit can be gained. Human-body-model (HBM) ESD level exceeding ±7 kV has been verified, indicating the effectiveness of the proposed solution for protecting the gate-to-source terminal of GaN-based power HEMT.

AB - A cost-efficient electrostatic discharge (ESD) protection solution for the gate-to-source terminal of GaN-based power high-electron-mobility transistors (HEMTs) is proposed. High ESD robustness of the GaN-based power HEMT has been successfully achieved by co-packaging a transient voltage suppressor (TVS) inside the package together, while a 32.6% reduction in cost as comparing to that with on-die bidirectional ESD protection circuit can be gained. Human-body-model (HBM) ESD level exceeding ±7 kV has been verified, indicating the effectiveness of the proposed solution for protecting the gate-to-source terminal of GaN-based power HEMT.

KW - Electrostatic discharge (ESD)

KW - GaN-on-Si process

KW - high-electron-mobility transistor (HEMT)

KW - human body model (HBM)

KW - human metal model (HMM)

KW - transient voltage suppressor (TVS)

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UR - https://www.scopus.com/pages/publications/105024123625#tab=citedBy

U2 - 10.1109/TDMR.2025.3640734

DO - 10.1109/TDMR.2025.3640734

M3 - Article

AN - SCOPUS:105024123625

SN - 1530-4388

JO - IEEE Transactions on Device and Materials Reliability

JF - IEEE Transactions on Device and Materials Reliability

ER -

Cost-Efficient Bidirectional ESD Protection for 650-V GaN Power HEMT With Co-Packaged Transient Voltage Suppressor

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

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