Correlation of thermal annealing effect, crystallinity and electrical characteristics in c-axis crystallized InGaZnO thin-film transistors

Hsiao Hsuan Hsu, Shiang Shiou Yen, Yu Chien Chiu, Ping Chiou, Chun Yen Chang, Chun Hu Cheng*, Yu Chien Lai, Chih Pang Chang, Hsueh Hsing Lu, Ching Sang Chuang, Yu Hsin Lin

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)

Abstract

A low off-state current of 1.6 × 10-14 A/μm and a small subthreshold gate swing of 152 mV/decade were achieved in a novel thin film transistor using a c-axis crystallized InGaZnO semiconductor that could be obtained at a low substrate temperature range of 150 °C. From experimental results, we found that the lowered off-state current is mainly attributed to the formation of rich Ga-O bonds to reduce oxygen vacancies, and the c-axis crystallized structure of IGZO to increase the potential barrier on the source side due to the increase of local trap states at the grain boundary.

Original languageEnglish
Pages (from-to)S187-S192
JournalJournal of Alloys and Compounds
Volume643
Issue numberS1
DOIs
Publication statusPublished - 2015 Jun 14

Keywords

  • Compound
  • Crystal
  • InGaZnO
  • Thin film transistor

ASJC Scopus subject areas

  • Mechanics of Materials
  • Mechanical Engineering
  • Metals and Alloys
  • Materials Chemistry

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