Correlation of thermal annealing effect, crystallinity and electrical characteristics in c-axis crystallized InGaZnO thin-film transistors

Hsiao Hsuan Hsu; Shiang Shiou Yen; Yu Chien Chiu; Ping Chiou; Chun Yen Chang; Chun Hu Cheng; Yu Chien Lai; Chih Pang Chang; Hsueh Hsing Lu; Ching Sang Chuang; Yu Hsin Lin

doi:10.1016/j.jallcom.2014.12.207

Correlation of thermal annealing effect, crystallinity and electrical characteristics in c-axis crystallized InGaZnO thin-film transistors

Hsiao Hsuan Hsu, Shiang Shiou Yen, Yu Chien Chiu, Ping Chiou, Chun Yen Chang, Chun Hu Cheng^*, Yu Chien Lai, Chih Pang Chang, Hsueh Hsing Lu, Ching Sang Chuang, Yu Hsin Lin

^*Corresponding author for this work

Department of Mechatronic Engineering

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

A low off-state current of 1.6 × 10^-14 A/μm and a small subthreshold gate swing of 152 mV/decade were achieved in a novel thin film transistor using a c-axis crystallized InGaZnO semiconductor that could be obtained at a low substrate temperature range of 150 °C. From experimental results, we found that the lowered off-state current is mainly attributed to the formation of rich Ga-O bonds to reduce oxygen vacancies, and the c-axis crystallized structure of IGZO to increase the potential barrier on the source side due to the increase of local trap states at the grain boundary.

Original language	English
Pages (from-to)	S187-S192
Journal	Journal of Alloys and Compounds
Volume	643
Issue number	S1
DOIs	https://doi.org/10.1016/j.jallcom.2014.12.207
Publication status	Published - 2015 Jun 14

Keywords

Compound
Crystal
InGaZnO
Thin film transistor

ASJC Scopus subject areas

Mechanics of Materials
Mechanical Engineering
Metals and Alloys
Materials Chemistry

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10.1016/j.jallcom.2014.12.207

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Hsu, H. H., Yen, S. S., Chiu, Y. C., Chiou, P., Chang, C. Y., Cheng, C. H., Lai, Y. C., Chang, C. P., Lu, H. H., Chuang, C. S., & Lin, Y. H. (2015). Correlation of thermal annealing effect, crystallinity and electrical characteristics in c-axis crystallized InGaZnO thin-film transistors. Journal of Alloys and Compounds, 643(S1), S187-S192. https://doi.org/10.1016/j.jallcom.2014.12.207

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title = "Correlation of thermal annealing effect, crystallinity and electrical characteristics in c-axis crystallized InGaZnO thin-film transistors",

abstract = "A low off-state current of 1.6 × 10-14 A/μm and a small subthreshold gate swing of 152 mV/decade were achieved in a novel thin film transistor using a c-axis crystallized InGaZnO semiconductor that could be obtained at a low substrate temperature range of 150 °C. From experimental results, we found that the lowered off-state current is mainly attributed to the formation of rich Ga-O bonds to reduce oxygen vacancies, and the c-axis crystallized structure of IGZO to increase the potential barrier on the source side due to the increase of local trap states at the grain boundary.",

keywords = "Compound, Crystal, InGaZnO, Thin film transistor",

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T1 - Correlation of thermal annealing effect, crystallinity and electrical characteristics in c-axis crystallized InGaZnO thin-film transistors

AU - Hsu, Hsiao Hsuan

AU - Yen, Shiang Shiou

AU - Chiu, Yu Chien

AU - Chiou, Ping

AU - Chang, Chun Yen

AU - Cheng, Chun Hu

AU - Lai, Yu Chien

AU - Chang, Chih Pang

AU - Lu, Hsueh Hsing

AU - Chuang, Ching Sang

AU - Lin, Yu Hsin

PY - 2015/6/14

Y1 - 2015/6/14

N2 - A low off-state current of 1.6 × 10-14 A/μm and a small subthreshold gate swing of 152 mV/decade were achieved in a novel thin film transistor using a c-axis crystallized InGaZnO semiconductor that could be obtained at a low substrate temperature range of 150 °C. From experimental results, we found that the lowered off-state current is mainly attributed to the formation of rich Ga-O bonds to reduce oxygen vacancies, and the c-axis crystallized structure of IGZO to increase the potential barrier on the source side due to the increase of local trap states at the grain boundary.

AB - A low off-state current of 1.6 × 10-14 A/μm and a small subthreshold gate swing of 152 mV/decade were achieved in a novel thin film transistor using a c-axis crystallized InGaZnO semiconductor that could be obtained at a low substrate temperature range of 150 °C. From experimental results, we found that the lowered off-state current is mainly attributed to the formation of rich Ga-O bonds to reduce oxygen vacancies, and the c-axis crystallized structure of IGZO to increase the potential barrier on the source side due to the increase of local trap states at the grain boundary.

KW - Compound

KW - Crystal

KW - InGaZnO

KW - Thin film transistor

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DO - 10.1016/j.jallcom.2014.12.207

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SN - 0925-8388

VL - 643

SP - S187-S192

JO - Journal of Alloys and Compounds

JF - Journal of Alloys and Compounds

IS - S1

ER -

Correlation of thermal annealing effect, crystallinity and electrical characteristics in c-axis crystallized InGaZnO thin-film transistors

Abstract

Keywords

ASJC Scopus subject areas

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