Correlation of thermal annealing effect, crystallinity and electrical characteristics in c-axis crystallized InGaZnO thin-film transistors

Hsiao Hsuan Hsu, Shiang Shiou Yen, Yu Chien Chiu, Ping Chiou, Chun Yen Chang, Chun Hu Cheng, Yu Chien Lai, Chih Pang Chang, Hsueh Hsing Lu, Ching Sang Chuang, Yu Hsin Lin

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3 Citations (Scopus)

Abstract

A low off-state current of 1.6 × 10-14 A/μm and a small subthreshold gate swing of 152 mV/decade were achieved in a novel thin film transistor using a c-axis crystallized InGaZnO semiconductor that could be obtained at a low substrate temperature range of 150 °C. From experimental results, we found that the lowered off-state current is mainly attributed to the formation of rich Ga-O bonds to reduce oxygen vacancies, and the c-axis crystallized structure of IGZO to increase the potential barrier on the source side due to the increase of local trap states at the grain boundary.

Original languageEnglish
Pages (from-to)S187-S192
JournalJournal of Alloys and Compounds
Volume643
Issue numberS1
DOIs
Publication statusPublished - 2015 Jun 14

Keywords

  • Compound
  • Crystal
  • InGaZnO
  • Thin film transistor

ASJC Scopus subject areas

  • Mechanics of Materials
  • Mechanical Engineering
  • Metals and Alloys
  • Materials Chemistry

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    Hsu, H. H., Yen, S. S., Chiu, Y. C., Chiou, P., Chang, C. Y., Cheng, C. H., Lai, Y. C., Chang, C. P., Lu, H. H., Chuang, C. S., & Lin, Y. H. (2015). Correlation of thermal annealing effect, crystallinity and electrical characteristics in c-axis crystallized InGaZnO thin-film transistors. Journal of Alloys and Compounds, 643(S1), S187-S192. https://doi.org/10.1016/j.jallcom.2014.12.207