Correlation between Si-H/D bond desorption and injected electron energy in metal-oxide-silicon tunneling diodes

C. H. Lin; M. H. Lee; C. W. Liu

doi:10.1063/1.1343477

Correlation between Si-H/D bond desorption and injected electron energy in metal-oxide-silicon tunneling diodes

C. H. Lin^*, M. H. Lee, C. W. Liu

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

Metal-oxide-silicon tunneling diodes with SiO₂/Si interface passivated by hydrogen or deuterium are stressed under various constant current conditions. When the energy of injected electrons exceeds a threshold value (∼3 eV), both hydrogen and deuterium passivated devices reveal similar soft breakdown behaviors. On the contrary, when the injected electrons with low energy (<3 eV) at high current density stress, a giant isotope effect is observed in the deuterated devices due to the resonance between the Si-D bond bending mode and the transverse optical phonon of bulk silicon.

Original language	English
Pages (from-to)	637-639
Number of pages	3
Journal	Applied Physics Letters
Volume	78
Issue number	5
DOIs	https://doi.org/10.1063/1.1343477
Publication status	Published - 2001 Jan 29
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.1343477

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@article{4668b529e78b4e52a8d1d4a78950af38,

title = "Correlation between Si-H/D bond desorption and injected electron energy in metal-oxide-silicon tunneling diodes",

abstract = "Metal-oxide-silicon tunneling diodes with SiO2/Si interface passivated by hydrogen or deuterium are stressed under various constant current conditions. When the energy of injected electrons exceeds a threshold value (∼3 eV), both hydrogen and deuterium passivated devices reveal similar soft breakdown behaviors. On the contrary, when the injected electrons with low energy (<3 eV) at high current density stress, a giant isotope effect is observed in the deuterated devices due to the resonance between the Si-D bond bending mode and the transverse optical phonon of bulk silicon.",

author = "Lin, {C. H.} and Lee, {M. H.} and Liu, {C. W.}",

year = "2001",

month = jan,

day = "29",

doi = "10.1063/1.1343477",

language = "English",

volume = "78",

pages = "637--639",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "5",

}

TY - JOUR

T1 - Correlation between Si-H/D bond desorption and injected electron energy in metal-oxide-silicon tunneling diodes

AU - Lin, C. H.

AU - Lee, M. H.

AU - Liu, C. W.

PY - 2001/1/29

Y1 - 2001/1/29

N2 - Metal-oxide-silicon tunneling diodes with SiO2/Si interface passivated by hydrogen or deuterium are stressed under various constant current conditions. When the energy of injected electrons exceeds a threshold value (∼3 eV), both hydrogen and deuterium passivated devices reveal similar soft breakdown behaviors. On the contrary, when the injected electrons with low energy (<3 eV) at high current density stress, a giant isotope effect is observed in the deuterated devices due to the resonance between the Si-D bond bending mode and the transverse optical phonon of bulk silicon.

AB - Metal-oxide-silicon tunneling diodes with SiO2/Si interface passivated by hydrogen or deuterium are stressed under various constant current conditions. When the energy of injected electrons exceeds a threshold value (∼3 eV), both hydrogen and deuterium passivated devices reveal similar soft breakdown behaviors. On the contrary, when the injected electrons with low energy (<3 eV) at high current density stress, a giant isotope effect is observed in the deuterated devices due to the resonance between the Si-D bond bending mode and the transverse optical phonon of bulk silicon.

UR - http://www.scopus.com/inward/record.url?scp=0001546595&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0001546595&partnerID=8YFLogxK

U2 - 10.1063/1.1343477

DO - 10.1063/1.1343477

M3 - Article

AN - SCOPUS:0001546595

SN - 0003-6951

VL - 78

SP - 637

EP - 639

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 5

ER -

Correlation between Si-H/D bond desorption and injected electron energy in metal-oxide-silicon tunneling diodes

Abstract

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