Correlation between Si-H/D bond desorption and injected electron energy in metal-oxide-silicon tunneling diodes

C. H. Lin, Min-Hung Lee, C. W. Liu

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

Metal-oxide-silicon tunneling diodes with SiO2/Si interface passivated by hydrogen or deuterium are stressed under various constant current conditions. When the energy of injected electrons exceeds a threshold value (∼3 eV), both hydrogen and deuterium passivated devices reveal similar soft breakdown behaviors. On the contrary, when the injected electrons with low energy (<3 eV) at high current density stress, a giant isotope effect is observed in the deuterated devices due to the resonance between the Si-D bond bending mode and the transverse optical phonon of bulk silicon.

Original languageEnglish
Pages (from-to)637-639
Number of pages3
JournalApplied Physics Letters
Volume78
Issue number5
DOIs
Publication statusPublished - 2001 Jan 29

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metal oxides
deuterium
desorption
diodes
electron energy
silicon
hydrogen
isotope effect
high current
electrons
breakdown
current density
thresholds
energy

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Correlation between Si-H/D bond desorption and injected electron energy in metal-oxide-silicon tunneling diodes. / Lin, C. H.; Lee, Min-Hung; Liu, C. W.

In: Applied Physics Letters, Vol. 78, No. 5, 29.01.2001, p. 637-639.

Research output: Contribution to journalArticle

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