Correlation between morphological transition and preferred thickness of Pb and Ag islands on Si(111)7 X 7

W. B. Su; H. Y. Lin; Y. P. Chiu; H. T. Shih; T. Y. Fu; Y. W. Chen; C. S. Chang; Tien T. Tsong

doi:10.1103/PhysRevB.71.073304

Correlation between morphological transition and preferred thickness of Pb and Ag islands on Si(111)7 X 7

W. B. Su^*, H. Y. Lin, Y. P. Chiu, H. T. Shih, T. Y. Fu, Y. W. Chen, C. S. Chang, Tien T. Tsong

^*Corresponding author for this work

Department of Physics

Research output: Contribution to journal › Article › peer-review

20 Citations (Scopus)

Abstract

It is known that a quantum size effect can induce a morphological transition of Pb nanostructure, from three-dimensional clusters to multilayer two-dimensional islands, grown on the Si(111)7 X 7 at low temperature. We use scanning tunneling microscopy to in situ observe the formation of an individual island to figure out the transition process. Our results reveal that every island differing in thickness can be correlated with a unique transition pathway. A similar behavior is also observed in the growth of flat Ag islands on the Si(111) 7 X 7 substrate at room temperature.

Original language	English
Article number	073304
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	71
Issue number	7
DOIs	https://doi.org/10.1103/PhysRevB.71.073304
Publication status	Published - 2005 Feb

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1103/PhysRevB.71.073304

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@article{3b98d0fbe00640f3bda2d00cfce6a670,

title = "Correlation between morphological transition and preferred thickness of Pb and Ag islands on Si(111)7 X 7",

abstract = "It is known that a quantum size effect can induce a morphological transition of Pb nanostructure, from three-dimensional clusters to multilayer two-dimensional islands, grown on the Si(111)7 X 7 at low temperature. We use scanning tunneling microscopy to in situ observe the formation of an individual island to figure out the transition process. Our results reveal that every island differing in thickness can be correlated with a unique transition pathway. A similar behavior is also observed in the growth of flat Ag islands on the Si(111) 7 X 7 substrate at room temperature.",

author = "Su, {W. B.} and Lin, {H. Y.} and Chiu, {Y. P.} and Shih, {H. T.} and Fu, {T. Y.} and Chen, {Y. W.} and Chang, {C. S.} and Tsong, {Tien T.}",

year = "2005",

month = feb,

doi = "10.1103/PhysRevB.71.073304",

language = "English",

volume = "71",

journal = "Physical Review B - Condensed Matter and Materials Physics",

issn = "1098-0121",

publisher = "American Physical Society",

number = "7",

}

TY - JOUR

T1 - Correlation between morphological transition and preferred thickness of Pb and Ag islands on Si(111)7 X 7

AU - Su, W. B.

AU - Lin, H. Y.

AU - Chiu, Y. P.

AU - Shih, H. T.

AU - Fu, T. Y.

AU - Chen, Y. W.

AU - Chang, C. S.

AU - Tsong, Tien T.

PY - 2005/2

Y1 - 2005/2

N2 - It is known that a quantum size effect can induce a morphological transition of Pb nanostructure, from three-dimensional clusters to multilayer two-dimensional islands, grown on the Si(111)7 X 7 at low temperature. We use scanning tunneling microscopy to in situ observe the formation of an individual island to figure out the transition process. Our results reveal that every island differing in thickness can be correlated with a unique transition pathway. A similar behavior is also observed in the growth of flat Ag islands on the Si(111) 7 X 7 substrate at room temperature.

AB - It is known that a quantum size effect can induce a morphological transition of Pb nanostructure, from three-dimensional clusters to multilayer two-dimensional islands, grown on the Si(111)7 X 7 at low temperature. We use scanning tunneling microscopy to in situ observe the formation of an individual island to figure out the transition process. Our results reveal that every island differing in thickness can be correlated with a unique transition pathway. A similar behavior is also observed in the growth of flat Ag islands on the Si(111) 7 X 7 substrate at room temperature.

UR - http://www.scopus.com/inward/record.url?scp=15744403438&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=15744403438&partnerID=8YFLogxK

U2 - 10.1103/PhysRevB.71.073304

DO - 10.1103/PhysRevB.71.073304

M3 - Article

AN - SCOPUS:15744403438

SN - 1098-0121

VL - 71

JO - Physical Review B - Condensed Matter and Materials Physics

JF - Physical Review B - Condensed Matter and Materials Physics

IS - 7

M1 - 073304

ER -

Correlation between morphological transition and preferred thickness of Pb and Ag islands on Si(111)7 X 7

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