Correlation between morphological transition and preferred thickness of Pb and Ag islands on Si(111)7 X 7

W. B. Su, H. Y. Lin, Ya-Ping Chiu, H. T. Shih, Tsu-Yi Fu, Y. W. Chen, C. S. Chang, Tien T. Tsong

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

It is known that a quantum size effect can induce a morphological transition of Pb nanostructure, from three-dimensional clusters to multilayer two-dimensional islands, grown on the Si(111)7 X 7 at low temperature. We use scanning tunneling microscopy to in situ observe the formation of an individual island to figure out the transition process. Our results reveal that every island differing in thickness can be correlated with a unique transition pathway. A similar behavior is also observed in the growth of flat Ag islands on the Si(111) 7 X 7 substrate at room temperature.

Original languageEnglish
Article number073304
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume71
Issue number7
DOIs
Publication statusPublished - 2005 Feb 1

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Scanning tunneling microscopy
Nanostructures
Multilayers
Temperature
Substrates
scanning tunneling microscopy
room temperature

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Correlation between morphological transition and preferred thickness of Pb and Ag islands on Si(111)7 X 7. / Su, W. B.; Lin, H. Y.; Chiu, Ya-Ping; Shih, H. T.; Fu, Tsu-Yi; Chen, Y. W.; Chang, C. S.; Tsong, Tien T.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 71, No. 7, 073304, 01.02.2005.

Research output: Contribution to journalArticle

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AU - Fu, Tsu-Yi

AU - Chen, Y. W.

AU - Chang, C. S.

AU - Tsong, Tien T.

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