Correlation between gap state density and bias stress reliability of nanocrystalline TFTs comparing with hydrogenated amorphous silicon TFTs

M. H. Lee; C. W. Tai; J. J. Huang

doi:10.1016/j.sse.2012.10.006

Correlation between gap state density and bias stress reliability of nanocrystalline TFTs comparing with hydrogenated amorphous silicon TFTs

M. H. Lee^*, C. W. Tai, J. J. Huang

^*Corresponding author for this work

Undergraduate Program of Electro-Optical Engineering

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

The disordered bonds may generate a redistribution of trap states, resulting in unstable electrical characteristics such as threshold voltage (V_T), subthreshold swing (SS), and mobility (μ) of carriers. The hydrogenated nanocrystalline (nc-Si:H) thin-film transistors (TFTs) were demonstrated with high electrical reliability for hot carrier (HC) stress and positive bias temperature instability (PBTI) stress and can be explained by trap state distribution of the bandgap. The weak or broken bonds may contribute to the redistribution of trap states and lead to unstable electrical characteristics of the hydrogenated amorphous Si (a-Si:H) TFTs. We conclude that the gap state density of a nc-Si:H layer with stress is the fundamental reliability issue for the development of flexible electronics.

Original language	English
Pages (from-to)	72-75
Number of pages	4
Journal	Solid-State Electronics
Volume	80
DOIs	https://doi.org/10.1016/j.sse.2012.10.006
Publication status	Published - 2013

Keywords

Gap state density
Mobility
a-Si:H TFT
nc-Si:H TFT

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1016/j.sse.2012.10.006

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@article{49ec8624379a41bd9faf6d3afb123e00,

title = "Correlation between gap state density and bias stress reliability of nanocrystalline TFTs comparing with hydrogenated amorphous silicon TFTs",

abstract = "The disordered bonds may generate a redistribution of trap states, resulting in unstable electrical characteristics such as threshold voltage (VT), subthreshold swing (SS), and mobility (μ) of carriers. The hydrogenated nanocrystalline (nc-Si:H) thin-film transistors (TFTs) were demonstrated with high electrical reliability for hot carrier (HC) stress and positive bias temperature instability (PBTI) stress and can be explained by trap state distribution of the bandgap. The weak or broken bonds may contribute to the redistribution of trap states and lead to unstable electrical characteristics of the hydrogenated amorphous Si (a-Si:H) TFTs. We conclude that the gap state density of a nc-Si:H layer with stress is the fundamental reliability issue for the development of flexible electronics.",

keywords = "Gap state density, Mobility, a-Si:H TFT, nc-Si:H TFT",

author = "Lee, {M. H.} and Tai, {C. W.} and Huang, {J. J.}",

note = "Funding Information: This research was supported by a funding from the National Science Council , Taiwan, through Grant No. NSC 101-2221-E-003-019 , and National Taiwan Normal University through Grant No. NTNU 100-D-01 . Experimental support was provided by the Display Technology Center/Industrial Technology Research Institute (DTC/ITRI) and National Nano Device Laboratories (NDL), Taiwan.",

year = "2013",

doi = "10.1016/j.sse.2012.10.006",

language = "English",

volume = "80",

pages = "72--75",

journal = "Solid-State Electronics",

issn = "0038-1101",

publisher = "Elsevier Limited",

}

TY - JOUR

T1 - Correlation between gap state density and bias stress reliability of nanocrystalline TFTs comparing with hydrogenated amorphous silicon TFTs

AU - Lee, M. H.

AU - Tai, C. W.

AU - Huang, J. J.

N1 - Funding Information: This research was supported by a funding from the National Science Council , Taiwan, through Grant No. NSC 101-2221-E-003-019 , and National Taiwan Normal University through Grant No. NTNU 100-D-01 . Experimental support was provided by the Display Technology Center/Industrial Technology Research Institute (DTC/ITRI) and National Nano Device Laboratories (NDL), Taiwan.

PY - 2013

Y1 - 2013

N2 - The disordered bonds may generate a redistribution of trap states, resulting in unstable electrical characteristics such as threshold voltage (VT), subthreshold swing (SS), and mobility (μ) of carriers. The hydrogenated nanocrystalline (nc-Si:H) thin-film transistors (TFTs) were demonstrated with high electrical reliability for hot carrier (HC) stress and positive bias temperature instability (PBTI) stress and can be explained by trap state distribution of the bandgap. The weak or broken bonds may contribute to the redistribution of trap states and lead to unstable electrical characteristics of the hydrogenated amorphous Si (a-Si:H) TFTs. We conclude that the gap state density of a nc-Si:H layer with stress is the fundamental reliability issue for the development of flexible electronics.

AB - The disordered bonds may generate a redistribution of trap states, resulting in unstable electrical characteristics such as threshold voltage (VT), subthreshold swing (SS), and mobility (μ) of carriers. The hydrogenated nanocrystalline (nc-Si:H) thin-film transistors (TFTs) were demonstrated with high electrical reliability for hot carrier (HC) stress and positive bias temperature instability (PBTI) stress and can be explained by trap state distribution of the bandgap. The weak or broken bonds may contribute to the redistribution of trap states and lead to unstable electrical characteristics of the hydrogenated amorphous Si (a-Si:H) TFTs. We conclude that the gap state density of a nc-Si:H layer with stress is the fundamental reliability issue for the development of flexible electronics.

KW - Gap state density

KW - Mobility

KW - a-Si:H TFT

KW - nc-Si:H TFT

UR - http://www.scopus.com/inward/record.url?scp=84871647993&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84871647993&partnerID=8YFLogxK

U2 - 10.1016/j.sse.2012.10.006

DO - 10.1016/j.sse.2012.10.006

M3 - Article

AN - SCOPUS:84871647993

SN - 0038-1101

VL - 80

SP - 72

EP - 75

JO - Solid-State Electronics

JF - Solid-State Electronics

ER -

Correlation between gap state density and bias stress reliability of nanocrystalline TFTs comparing with hydrogenated amorphous silicon TFTs

Abstract

Keywords

ASJC Scopus subject areas

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